Assignee
SARAYAMA SEIJI
JP·11 granted patents·2 pending applications·23 citations·filing 2006–2015
Top patents by PatentIndex Score
13 records- 0190US8337798B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2007·Granted Dec 25, 2012·15 cites·19 claims
- 0284US8101020B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2006·Granted Jan 24, 2012·4 cites·48 claims
- 0372US2013330264A1Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor deviceSARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 0468US8623138B2Crystal growth apparatusSARAYAMA SEIJI·Filed 2009·Granted Jan 7, 2014·2 cites·25 claims
- 0567US9856575B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2015·Granted Jan 2, 2018·0 cites·10 claims
- 0667US9163325B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2011·Granted Oct 20, 2015·0 cites·9 claims
- 0763US8562737B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor deviceSARAYAMA SEIJI·Filed 2008·Granted Oct 22, 2013·0 cites·19 claims
- 0862US8591647B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonSARAYAMA SEIJI·Filed 2009·Granted Nov 26, 2013·1 cites·19 claims
- 0958US8129082B2Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatusSARAYAMA SEIJI·Filed 2008·Granted Mar 6, 2012·1 cites·17 claims
- 1055US2014044970A1PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATESARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 1153US8829530B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2012·Granted Sep 9, 2014·0 cites·19 claims
- 1247US9222199B2Crystal manufacturing apparatusSARAYAMA SEIJI·Filed 2010·Granted Dec 29, 2015·0 cites·3 claims
- 1347US8888912B2Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystalSARAYAMA SEIJI·Filed 2006·Granted Nov 18, 2014·0 cites·18 claims
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