US2014044970A1PendingUtilityA1

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE

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Assignee: SARAYAMA SEIJIPriority: Jun 9, 1999Filed: Oct 18, 2013Published: Feb 13, 2014
Est. expiryJun 9, 2019(expired)· nominal 20-yr term from priority
Inventors:Seiji SarayamaMasahiko ShimadaHisanori YamaneHirokazu Iwata
H10D 62/8503C30B 7/00C30B 9/00C30B 11/00Y10T117/1096C30B 29/403C09K 11/62C30B 29/406Y10T117/1092Y10T428/2982C30B 7/105C30B 15/00H10D 30/4732
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Claims

Abstract

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

Claims

exact text as granted — not AI-modified
1 . A crystal having a diameter of 1 cm or more,
 said crystal showing a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.   
     
     
         2 - 20 . (canceled)

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