Inventor · disambiguated record
Seiji Sarayama
Also filed as: SARAYAMA SEIJI
38 granted patents·16 pending applications·420 citations·filing 2000–2019
97Inventor score
Top patents by PatentIndex Score
54 records- 0198US6592663B1Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2000·Granted Jul 15, 2003·167 cites·51 claims
- 0295US6780239B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2001·Granted Aug 24, 2004·40 cites·20 claims
- 0392US6949140B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Sep 27, 2005·49 cites·69 claims
- 0490US8337798B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2007·Granted Dec 25, 2012·15 cites·19 claims
- 0590US7220311B2Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitrideRICOH KK·Filed 2003·Granted May 22, 2007·28 cites·29 claims
- 0686US7508003B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonRICOH KK·Filed 2006·Granted Mar 24, 2009·8 cites·19 claims
- 0785US7531038B2Crystal growth methodRICOH KK·Filed 2005·Granted May 12, 2009·9 cites·3 claims
- 0884US8101020B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2006·Granted Jan 24, 2012·4 cites·48 claims
- 0984US7462238B2Crystal growth apparatus and method of producing a crystalRICOH KK·Filed 2006·Granted Dec 9, 2008·14 cites·22 claims
- 1082US7261775B2Methods of growing a group III nitride crystalRICOH KK·Filed 2004·Granted Aug 28, 2007·22 cites·21 claims
- 1182US7001457B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Feb 21, 2006·31 cites·20 claims
- 1281US9732435B2Group 13 nitride crystal and group 13 nitride crystal substrateHAYASHI MASAHIRO·Filed 2012·Granted Aug 15, 2017·2 cites·10 claims
- 1378US7981213B2Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitrideRICOH CO LTD·Filed 2007·Granted Jul 19, 2011·2 cites·1 claims
- 1477US8337617B2Manufacturing method and manufacturing apparatus of a group III nitride crystalIWATA HIROKAZU·Filed 2006·Granted Dec 25, 2012·2 cites·4 claims
- 1577US7250640B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2003·Granted Jul 31, 2007·14 cites·13 claims
- 1674US7828896B2Methods of growing a group III nitride crystalRICOH KK·Filed 2007·Granted Nov 9, 2010·4 cites·15 claims
- 1772US2013330264A1Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor deviceSARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 1870US7718002B2Crystal manufacturing apparatusRICOH KK·Filed 2008·Granted May 18, 2010·4 cites·8 claims
- 1968US9376763B2Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogenIWATA HIROKAZU·Filed 2012·Granted Jun 28, 2016·0 cites·6 claims
- 2068US8623138B2Crystal growth apparatusSARAYAMA SEIJI·Filed 2009·Granted Jan 7, 2014·2 cites·25 claims
- 2167US9856575B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2015·Granted Jan 2, 2018·0 cites·10 claims
- 2267US9163325B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2011·Granted Oct 20, 2015·0 cites·9 claims
- 2363US11718927B2Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or moreSUMITOMO CHEMICAL CO·Filed 2019·Granted Aug 8, 2023·0 cites·3 claims
- 2463US8562737B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor deviceSARAYAMA SEIJI·Filed 2008·Granted Oct 22, 2013·0 cites·19 claims
- 2562US8591647B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonSARAYAMA SEIJI·Filed 2009·Granted Nov 26, 2013·1 cites·19 claims
- 2661US2017204534A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2017·Application pending·0 cites
- 2760US9863058B2Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2015·Granted Jan 9, 2018·0 cites·13 claims
- 2860US8475593B2Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2011·Granted Jul 2, 2013·1 cites·5 claims
- 2958US8129082B2Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatusSARAYAMA SEIJI·Filed 2008·Granted Mar 6, 2012·1 cites·17 claims
- 3057US9869033B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH CO LTD·Filed 2015·Granted Jan 16, 2018·0 cites·4 claims
- 3156US10100426B2Method for producing gallium nitride crystalSATOH TAKASHI·Filed 2014·Granted Oct 16, 2018·0 cites·12 claims
- 3255US2016168747A1Apparatus and method for manufacturing group 13 nitride crystalMORI YUSUKE·Filed 2014·Application pending·0 cites
- 3355US2007215034A1Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2007·Application pending·0 cites
- 3455US2014044970A1PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATESARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 3553US8829530B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2012·Granted Sep 9, 2014·0 cites·19 claims
- 3653US2013065036A1Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystalHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 3752US2014271439A1Group 13 nitride crystal and method for production of group 13 nitride crystalWADA JUNICHI·Filed 2014·Application pending·0 cites
- 3851US2016177468A1Method and apparatus for manufacturing group 13 nitride crystalSATOH TAKASHI·Filed 2014·Application pending·0 cites
- 3950US9365948B2Group III nitride crystal and manufacturing method thereofIWATA HIROKAZU·Filed 2012·Granted Jun 14, 2016·0 cites·5 claims
- 4050US8323404B2Group III nitride crystal and manufacturing method thereofIWATA HIROKAZU·Filed 2006·Granted Dec 4, 2012·0 cites·14 claims
- 4149US2005026318A1Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceFiled 2004·Application pending·0 cites
- 4248US9404196B2Manufacturing method of group 13 nitride crystalHAYASHI MASAHIRO·Filed 2012·Granted Aug 2, 2016·0 cites·8 claims
- 4347US9222199B2Crystal manufacturing apparatusSARAYAMA SEIJI·Filed 2010·Granted Dec 29, 2015·0 cites·3 claims
- 4447US9096950B2Nitride crystal and method for producing the sameSATOH TAKASHI·Filed 2011·Granted Aug 4, 2015·0 cites·11 claims
- 4547US8888912B2Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystalSARAYAMA SEIJI·Filed 2006·Granted Nov 18, 2014·0 cites·18 claims
- 4646US2013243680A1Group 13 nitride crystal and group 13 nitride crystal substrateHAYASHI MASAHIRO·Filed 2013·Application pending·0 cites
- 4746US2013065010A1Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing methodHAYASHI MASAHIRO·Filed 2012·Application pending·0 cites
- 4845US2011012235A1Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor deviceIWATA HIROKAZU·Filed 2010·Application pending·0 cites
- 4943US2018163323A1Method for producing group 13 nitride single crystal and apparatus for producing group 13 nitride single crystalSATOH TAKASHI·Filed 2018·Application pending·0 cites
- 5041US2015315723A1Nitride crystal and method for producing the sameSATOH TAKASHI·Filed 2015·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →