Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device

Abstract

A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

1 - 58 . (canceled) 
     
     
         59 . A crystal production method, comprising
 re-evaporating an alkaline metal condensed to the outside of a first reaction vessel when growing a crystal of a group-III nitride in the first reaction vessel using a mixed molten liquid containing the alkaline metal and at least a group-III metal, and a nitrogen material brought from the outside of the first reaction vessel.   
     
     
         60 . The crystal production method as claimed in  claim 59 , wherein
 in the re-evaporating, the alkaline metal condensed to a zone through which the nitrogen material outside the first reaction vessel passes is re-evaporated.   
     
     
         61 . The crystal production method as claimed in  claim 60 , wherein
 in the re-evaporating, the zone through which the nitrogen material passes is heated to re-evaporate the alkaline metal.