Inventor · disambiguated record
Hirokazu Iwata
Also filed as: IWATA HIROKAZU
51 granted patents·11 pending applications·717 citations·filing 1995–2025
98Inventor score
Top patents by PatentIndex Score
62 records- 0198US6592663B1Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2000·Granted Jul 15, 2003·167 cites·51 claims
- 0294US5684523AOptical line printhead and an LED chip used thereforRICOH KK·Filed 1995·Granted Nov 4, 1997·145 cites·46 claims
- 0392US6949140B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Sep 27, 2005·49 cites·69 claims
- 0491US10819307B2Crystal unit and manufacturing method thereofNIHON DEMPA KOGYO CO·Filed 2018·Granted Oct 27, 2020·7 cites·3 claims
- 0590US8337798B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2007·Granted Dec 25, 2012·15 cites·19 claims
- 0690US7220311B2Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitrideRICOH KK·Filed 2003·Granted May 22, 2007·28 cites·29 claims
- 0790US7098574B2Piezoelectric resonator and method for manufacturing the sameTOYO COMMUNICATION EQUIP·Filed 2003·Granted Aug 29, 2006·35 cites·12 claims
- 0890US6750593B2High frequency piezoelectric resonator having reduced spurious modesTOYO COMMUNICATION EQUIP·Filed 2000·Granted Jun 15, 2004·43 cites·11 claims
- 0988US7235913B2Piezoelectric substrate, piezoelectric resonating element and surface-mount piezoelectric oscillatorTOYO COMMUNICATION EQUIP·Filed 2006·Granted Jun 26, 2007·15 cites·5 claims
- 1086US7508003B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonRICOH KK·Filed 2006·Granted Mar 24, 2009·8 cites·19 claims
- 1185US7531038B2Crystal growth methodRICOH KK·Filed 2005·Granted May 12, 2009·9 cites·3 claims
- 1284US10263597B2Crystal unitNIHON DEMPA KOGYO CO·Filed 2016·Granted Apr 16, 2019·4 cites·5 claims
- 1384US8101020B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2006·Granted Jan 24, 2012·4 cites·48 claims
- 1484US7462238B2Crystal growth apparatus and method of producing a crystalRICOH KK·Filed 2006·Granted Dec 9, 2008·14 cites·22 claims
- 1583US10659005B2At-cut crystal element, crystal resonator and crystal unitNIHON DEMPA KOGYO CO·Filed 2016·Granted May 19, 2020·4 cites·7 claims
- 1682US7261775B2Methods of growing a group III nitride crystalRICOH KK·Filed 2004·Granted Aug 28, 2007·22 cites·21 claims
- 1782US7001457B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Feb 21, 2006·31 cites·20 claims
- 1881US10529910B2Piezoelectric deviceNIHON DEMPA KOGYO CO·Filed 2017·Granted Jan 7, 2020·3 cites·12 claims
- 1978US8194266B2Positional error detection method and apparatus, and computer-readable storage mediumMIYADERA TATSUYA·Filed 2008·Granted Jun 5, 2012·5 cites·23 claims
- 2078US7981213B2Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitrideRICOH CO LTD·Filed 2007·Granted Jul 19, 2011·2 cites·1 claims
- 2177US8337617B2Manufacturing method and manufacturing apparatus of a group III nitride crystalIWATA HIROKAZU·Filed 2006·Granted Dec 25, 2012·2 cites·4 claims
- 2277US7250640B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2003·Granted Jul 31, 2007·14 cites·13 claims
- 2374US9464367B2Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2014·Granted Oct 11, 2016·1 cites·2 claims
- 2474US7828896B2Methods of growing a group III nitride crystalRICOH KK·Filed 2007·Granted Nov 9, 2010·4 cites·15 claims
- 2574US5665985ALight-emitting diode of edge-emitting type, light-receiving device of lateral-surface-receiving type, and arrayed light sourceRICOH KK·Filed 1996·Granted Sep 9, 1997·54 cites·11 claims
- 2673US10333489B2Crystal unitNIHON DEMPA KOGYO CO·Filed 2016·Granted Jun 25, 2019·2 cites·8 claims
- 2771US10250225B2AT-cut crystal element, crystal resonator and crystal unitNIHON DEMPA KOGYO CO·Filed 2016·Granted Apr 2, 2019·2 cites·10 claims
- 2871US2024228703A9Polymer powder, method of producing same and method of producing 3-dimensional model objectTORAY INDUSTRIES·Filed 2022·Application pending·0 cites
- 2970US7718002B2Crystal manufacturing apparatusRICOH KK·Filed 2008·Granted May 18, 2010·4 cites·8 claims
- 3068US9376763B2Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogenIWATA HIROKAZU·Filed 2012·Granted Jun 28, 2016·0 cites·6 claims
- 3168US8623138B2Crystal growth apparatusSARAYAMA SEIJI·Filed 2009·Granted Jan 7, 2014·2 cites·25 claims
- 3268US2025289927A1Polymer powder, method of producing same and method of producing 3-dimensional model objectTORAY INDUSTRIES·Filed 2025·Application pending·0 cites
- 3367US9856575B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2015·Granted Jan 2, 2018·0 cites·10 claims
- 3467US9163325B2Crystal growth apparatus and manufacturing method of group III nitride crystalSARAYAMA SEIJI·Filed 2011·Granted Oct 20, 2015·0 cites·9 claims
- 3565US2025183620A1Surface emitting laser, projection apparatus, head-up display, moving body, head-mounted display, and optometry apparatusKAMINISHI MORIMASA·Filed 2023·Application pending·0 cites
- 3662US8591647B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonSARAYAMA SEIJI·Filed 2009·Granted Nov 26, 2013·1 cites·19 claims
- 3761US7012353B2Piezoelectric resonator and the method for making the sameTOYO COMMUNICATION EQUIP·Filed 2005·Granted Mar 14, 2006·3 cites·3 claims
- 3860US8475593B2Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2011·Granted Jul 2, 2013·1 cites·5 claims
- 3959US2016362815A1Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2016·Application pending·0 cites
- 4058US8858908B2Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2011·Granted Oct 14, 2014·0 cites·2 claims
- 4157US9869033B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH CO LTD·Filed 2015·Granted Jan 16, 2018·0 cites·4 claims
- 4257US2025320336A1Powder composition, method of producing three-dimensional model object by powder bed fusion method using powder composition, and three-dimensional model objectTORAY INDUSTRIES·Filed 2022·Application pending·0 cites
- 4356US11245249B2Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laserRICOH CO LTD·Filed 2019·Granted Feb 8, 2022·0 cites·23 claims
- 4455US2007215034A1Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2007·Application pending·0 cites
- 4555US2014044970A1PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATESARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 4653US11296275B2Piezoelectric device, piezoelectric vibrating piece, and method for manufacturing piezoelectric vibrating pieceNIHON DEMPA KOGYO CO·Filed 2018·Granted Apr 5, 2022·0 cites·7 claims
- 4753US8829530B2Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrateSARAYAMA SEIJI·Filed 2012·Granted Sep 9, 2014·0 cites·19 claims
- 4853US2024140026A1Method of manufacturing 3-dimensional model object using resin granular material, 3-dimensional model object and resin granular materialTORAY INDUSTRIES·Filed 2022·Application pending·0 cites
- 4951US6294033B1Lamination apparatus and sheet roll for use in lamination apparatusBROTHER IND LTD·Filed 1999·Granted Sep 25, 2001·17 cites·23 claims
- 5050US9365948B2Group III nitride crystal and manufacturing method thereofIWATA HIROKAZU·Filed 2012·Granted Jun 14, 2016·0 cites·5 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →