Assignee
LIN HSIN CHANG
TW·4 granted patents·9 pending applications·20 citations·filing 2006–2012
Top patents by PatentIndex Score
13 records- 0180US8218369B2Non-volatile memory low voltage and high speed erasure methodLIN HSIN CHANG·Filed 2010·Granted Jul 10, 2012·7 cites·4 claims
- 0279US8305808B2Low-voltage EEPROM arrayLIN HSIN CHANG·Filed 2010·Granted Nov 6, 2012·9 cites·7 claims
- 0352US8300461B2Area saving electrically-erasable-programmable read-only memory (EEPROM) arrayLIN HSIN CHANG·Filed 2010·Granted Oct 30, 2012·2 cites·23 claims
- 0451US8300469B2Cost saving electrically-erasable-programmable read-only memory (EEPROM) arrayLIN HSIN CHANG·Filed 2010·Granted Oct 30, 2012·2 cites·16 claims
- 0548US2010131535A1Geographic location identify system with open-type identifier and method for generating the identifierLIN HSIN-CHANG·Filed 2009·Application pending·0 cites
- 0646US2008173915A1Single-gate non-volatile memory and operation method thereofLIN HSIN-CHANG·Filed 2008·Application pending·0 cites
- 0739US2009185429A1Non-volatile memory with single floating gate and method for operating the sameLIN HSIN CHANG·Filed 2008·Application pending·0 cites
- 0836US2008035973A1Low-noise single-gate non-volatile memory and operation method thereofLIN HSIN CHANG·Filed 2006·Application pending·0 cites
- 0935US2013334586A1Non-self-aligned non-volatile memory structureLIN HSIN CHANG·Filed 2012·Application pending·0 cites
- 1034US2013181276A1Non-self aligned non-volatile memory structureLIN HSIN CHANG·Filed 2012·Application pending·0 cites
- 1134US2007241392A1Non-volatile flash memory structure and method for operating the sameLIN HSIN-CHANG·Filed 2006·Application pending·0 cites
- 1232US2012040504A1Method for integrating dram and nvmLIN HSIN CHANG·Filed 2010·Application pending·0 cites
- 1330US2011286281A1Reference current generator used for programming and erasing of non-volatile memoryLIN HSIN CHANG·Filed 2010·Application pending·0 cites
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