Assignee
MAYUZUMI SATORU
JP·2 granted patents·2 pending applications·27 citations·filing 2010–2012
Top patents by PatentIndex Score
4 records- 0192US8896068B2Semiconductor device including source/drain regions and a gate electrode, and having contact portionsMAYUZUMI SATORU·Filed 2010·Granted Nov 25, 2014·27 cites·13 claims
- 0252US9153663B2Semiconductor device having a stress-inducing layer between channel region and source and drain regionsMAYUZUMI SATORU·Filed 2010·Granted Oct 6, 2015·0 cites·19 claims
- 0347US2012032240A1Semiconductor device and manufacturing method thereofMAYUZUMI SATORU·Filed 2011·Application pending·0 cites
- 0438US2012199829A1Semiconductor deviceMAYUZUMI SATORU·Filed 2012·Application pending·0 cites
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