Assignee
PEI CHENGWEN
US·11 granted patents·2 pending applications·36 citations·filing 2009–2012
Top patents by PatentIndex Score
13 records- 0190US8470684B2Suppression of diffusion in epitaxial buried plate for deep trenchesPEI CHENGWEN·Filed 2011·Granted Jun 25, 2013·10 cites·20 claims
- 0285US9076817B2Epitaxial extension CMOS transistorPEI CHENGWEN·Filed 2011·Granted Jul 7, 2015·7 cites·14 claims
- 0382US8409989B2Structure and method to fabricate a body contactPEI CHENGWEN·Filed 2010·Granted Apr 2, 2013·5 cites·12 claims
- 0477US8188528B2Structure and method to form EDRAM on SOI substratePEI CHENGWEN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 0575US8535544B2Structure and method to form nanoporePEI CHENGWEN·Filed 2010·Granted Sep 17, 2013·1 cites·8 claims
- 0674US8629017B2Structure and method to form EDRAM on SOI substratePEI CHENGWEN·Filed 2012·Granted Jan 14, 2014·3 cites·20 claims
- 0768US8299530B2Structure and method to fabricate pFETS with superior GIDL by localizing workfunctionPEI CHENGWEN·Filed 2010·Granted Oct 30, 2012·2 cites·15 claims
- 0866US8455327B2Trench capacitor with spacer-less fabrication processPEI CHENGWEN·Filed 2011·Granted Jun 4, 2013·1 cites·7 claims
- 0962US9064745B2Sublithographic width finFET employing solid phase epitaxyPEI CHENGWEN·Filed 2012·Granted Jun 23, 2015·1 cites·16 claims
- 1060US8642440B2Capacitor with deep trench ion implantationPEI CHENGWEN·Filed 2011·Granted Feb 4, 2014·1 cites·11 claims
- 1147US2012119302A1Trench Silicide Contact With Low Interface ResistancePEI CHENGWEN·Filed 2010·Application pending·0 cites
- 1246US8299573B2Trench capacitorPEI CHENGWEN·Filed 2010·Granted Oct 30, 2012·0 cites·20 claims
- 1341US2014008756A1Deep trench heat sinkPEI CHENGWEN·Filed 2012·Application pending·0 cites
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