Assignee
PFIRSCH FRANK
DE·9 granted patents·1 pending application·92 citations·filing 2005–2012
Top patents by PatentIndex Score
10 records- 0197US8643085B2High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structurePFIRSCH FRANK·Filed 2005·Granted Feb 4, 2014·53 cites·26 claims
- 0288US9012311B2Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor componentPFIRSCH FRANK·Filed 2008·Granted Apr 21, 2015·9 cites·15 claims
- 0385US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 0483US8264033B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2009·Granted Sep 11, 2012·8 cites·15 claims
- 0580US8866215B2Semiconductor component having a transition regionPFIRSCH FRANK·Filed 2007·Granted Oct 21, 2014·7 cites·24 claims
- 0663US8482062B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2012·Granted Jul 9, 2013·1 cites·12 claims
- 0761US8264040B2Lateral power transistor and method for producing samePFIRSCH FRANK·Filed 2007·Granted Sep 11, 2012·2 cites·16 claims
- 0855US8236676B2Integrated circuit having doped semiconductor body and methodPFIRSCH FRANK·Filed 2007·Granted Aug 7, 2012·0 cites·16 claims
- 0953US8637328B2Integrated circuit having doped semiconductor body and methodPFIRSCH FRANK·Filed 2012·Granted Jan 28, 2014·0 cites·13 claims
- 1046US2013341673A1Reverse Conducting IGBTPFIRSCH FRANK·Filed 2012·Application pending·0 cites
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