Assignee
RICHTER RALF
DE·18 granted patents·2 pending applications·36 citations·filing 2006–2012
Top patents by PatentIndex Score
20 records- 0184US8258062B2Cap layer removal in a high-K metal gate stack by using an etch processRICHTER RALF·Filed 2010·Granted Sep 4, 2012·8 cites·25 claims
- 0282US8951907B2Semiconductor devices having through-contacts and related fabrication methodsRICHTER RALF·Filed 2010·Granted Feb 10, 2015·7 cites·18 claims
- 0376US8216928B1Methods for fabricating semiconductor devices having local contactsRICHTER RALF·Filed 2011·Granted Jul 10, 2012·4 cites·20 claims
- 0474US8426312B2Method of reducing contamination by providing an etch stop layer at the substrate edgeRICHTER RALF·Filed 2006·Granted Apr 23, 2013·5 cites·10 claims
- 0571US8129276B2Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistorsRICHTER RALF·Filed 2010·Granted Mar 6, 2012·3 cites·11 claims
- 0667US9136319B2Method of making capacitor with a sealing liner and semiconductor device comprising sameRICHTER RALF·Filed 2011·Granted Sep 15, 2015·2 cites·12 claims
- 0766US8216927B2Method of reducing contamination by providing a removable polymer protection film during microstructure processingRICHTER RALF·Filed 2011·Granted Jul 10, 2012·1 cites·15 claims
- 0865US8198190B2Semiconductor device and method for patterning vertical contacts and metal lines in a common etch processRICHTER RALF·Filed 2008·Granted Jun 12, 2012·3 cites·16 claims
- 0964US8906801B2Processes for forming integrated circuits and integrated circuits formed therebyRICHTER RALF·Filed 2012·Granted Dec 9, 2014·2 cites·19 claims
- 1060US8435841B2Enhancement of ultraviolet curing of tensile stress liner using reflective materialsRICHTER RALF·Filed 2010·Granted May 7, 2013·1 cites·12 claims
- 1155US8338314B2Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistorsRICHTER RALF·Filed 2009·Granted Dec 25, 2012·0 cites·16 claims
- 1247US8741770B2Semiconductor device and method for patterning vertical contacts and metal lines in a common etch processRICHTER RALF·Filed 2012·Granted Jun 3, 2014·0 cites·4 claims
- 1344US8697584B2Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor deviceRICHTER RALF·Filed 2008·Granted Apr 15, 2014·0 cites·23 claims
- 1441US8722511B2Reduced topography in isolation regions of a semiconductor device by applying a deposition/etch sequence prior to forming the interlayer dielectricRICHTER RALF·Filed 2011·Granted May 13, 2014·0 cites·12 claims
- 1541US8324108B2Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistryRICHTER RALF·Filed 2011·Granted Dec 4, 2012·0 cites·20 claims
- 1641US2013224948A1Methods for deposition of tungsten in the fabrication of an integrated circuitRICHTER RALF·Filed 2012·Application pending·0 cites
- 1738US9034744B2Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder materialRICHTER RALF·Filed 2010·Granted May 19, 2015·0 cites·21 claims
- 1838US8658509B2Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gatesRICHTER RALF·Filed 2010·Granted Feb 25, 2014·0 cites·17 claims
- 1938US8450172B2Non-insulating stressed material layers in a contact level of semiconductor devicesRICHTER RALF·Filed 2010·Granted May 28, 2013·0 cites·18 claims
- 2038US2012001263A1Replacement Gate Approach for High-K Metal Gate Stacks Based on a Non-Conformal Interlayer DielectricRICHTER RALF·Filed 2010·Application pending·0 cites
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