Assignee
SANDISK TECHNOLOGIES LLC
US·2,072 granted patents·324 pending applications·18,728 citations·filing 2012–2024
Top patents by PatentIndex Score
2,396 records- 0199US11991881B2Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 21, 2024·6 cites·18 claims
- 0299US11569215B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 31, 2023·19 cites·20 claims
- 0399US11482539B2Three-dimensional memory device including metal silicide source regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 25, 2022·11 cites·6 claims
- 0499US11380707B2Three-dimensional memory device including backside trench support structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 5, 2022·9 cites·20 claims
- 0599US11322509B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·13 cites·19 claims
- 0699US11322483B1Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·16 cites·20 claims
- 0799US11244953B2Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·10 cites·13 claims
- 0899US11195857B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·7 cites·20 claims
- 0999US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 1099US11127728B2Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·9 cites·20 claims
- 1199US11107516B1Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 31, 2021·24 cites·20 claims
- 1299US10923196B1Erase operation in 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·13 cites·19 claims
- 1399US10903164B2Bonded assembly including a semiconductor-on-insulator die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 26, 2021·8 cites·5 claims
- 1499US10700078B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·35 cites·12 claims
- 1599US10700090B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·46 cites·12 claims
- 1699US10665581B1Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·86 cites·15 claims
- 1799US10629616B1Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·143 cites·20 claims
- 1899US10510738B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 17, 2019·104 cites·20 claims
- 1999US10475879B1Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 12, 2019·46 cites·20 claims
- 2099US10354980B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·168 cites·16 claims
- 2199US10355009B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·62 cites·10 claims
- 2299US10354987B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·139 cites·20 claims
- 2399US10304852B1Three-dimensional memory device containing through-memory-level contact via structuresSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 28, 2019·115 cites·12 claims
- 2499US10290648B1Three-dimensional memory device containing air gap rails and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·71 cites·12 claims
- 2599US10290643B1Three-dimensional memory device containing floating gate select transistorSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·44 cites·11 claims
- 2699US10283493B1Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 7, 2019·288 cites·18 claims
- 2799US10283513B1Three-dimensional memory device with annular blocking dielectrics and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·82 cites·11 claims
- 2899US10256247B1Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·77 cites·10 claims
- 2999US10103169B1Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch processSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 16, 2018·70 cites·14 claims
- 3099US10038092B1Three-level ferroelectric memory cell using band alignment engineeringSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 31, 2018·53 cites·12 claims
- 3199US9960181B1Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·155 cites·12 claims
- 3299US9953992B1Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 24, 2018·64 cites·13 claims
- 3399US9853038B1Three-dimensional memory device having integrated support and contact structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 26, 2017·119 cites·11 claims
- 3499US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 3599US9812462B1Memory hole size variation in a 3D stacked memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·104 cites·11 claims
- 3699US9711229B13D NAND with partial block eraseSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 18, 2017·53 cites·19 claims
- 3798US11963352B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 16, 2024·5 cites·20 claims
- 3898US11856765B2Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 26, 2023·6 cites·14 claims
- 3998US11791327B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·4 cites·14 claims
- 4098US11721727B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 8, 2023·6 cites·2 claims
- 4198US11676954B2Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 13, 2023·3 cites·20 claims
- 4298US11631686B2Three-dimensional memory array including dual work function floating gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 18, 2023·6 cites·15 claims
- 4398US11621277B2Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 4, 2023·5 cites·8 claims
- 4498US11562975B2Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 24, 2023·8 cites·20 claims
- 4598US11501837B1Read operation or word line voltage refresh operation in memory device with reduced peak currentSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 15, 2022·13 cites·20 claims
- 4698US11495612B2Three-dimensional memory device including stairless word line contact structures for and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 8, 2022·8 cites·10 claims
- 4798US11450685B2Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 20, 2022·6 cites·20 claims
- 4898US11404123B1Non-volatile memory with multiple wells for word line switch transistorsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 2, 2022·6 cites·20 claims
- 4998US11387142B1Semiconductor device containing bit lines separated by air gaps and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 12, 2022·7 cites·20 claims
- 5098US11373710B1Time division peak power management for non-volatile storageSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 28, 2022·22 cites·20 claims
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