Assignee
SCHULZE HANS-JOACHIM
DE·30 granted patents·2 pending applications·136 citations·filing 2005–2012
Top patents by PatentIndex Score
32 records- 0195US8222681B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Jul 17, 2012·20 cites·4 claims
- 0292US8772126B2Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 8, 2014·11 cites·13 claims
- 0392US8120074B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2009·Granted Feb 21, 2012·23 cites·17 claims
- 0489US8779509B2Semiconductor device including an edge area and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 15, 2014·7 cites·15 claims
- 0589US8587025B1Method for forming laterally varying doping concentrations and a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Nov 19, 2013·10 cites·19 claims
- 0686US8823089B2SiC semiconductor power deviceSCHULZE HANS-JOACHIM·Filed 2011·Granted Sep 2, 2014·7 cites·12 claims
- 0786US8710620B2Method of manufacturing semiconductor devices using ion implantationSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 29, 2014·6 cites·15 claims
- 0886US8541833B2Power transistor device vertical integrationSCHULZE HANS-JOACHIM·Filed 2011·Granted Sep 24, 2013·8 cites·14 claims
- 0984US8633095B2Semiconductor device with voltage compensation structureSCHULZE HANS-JOACHIM·Filed 2011·Granted Jan 21, 2014·6 cites·16 claims
- 1079US8829562B2Semiconductor device including a dielectric structure in a trenchSCHULZE HANS-JOACHIM·Filed 2012·Granted Sep 9, 2014·5 cites·26 claims
- 1177US8101506B2Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor componentSCHULZE HANS-JOACHIM·Filed 2010·Granted Jan 24, 2012·3 cites·16 claims
- 1274US8183666B2Semiconductor device including semiconductor zones and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2009·Granted May 22, 2012·5 cites·25 claims
- 1373US8946850B2Integrated circuit including a power transistor and an auxiliary transistorSCHULZE HANS-JOACHIM·Filed 2011·Granted Feb 3, 2015·3 cites·23 claims
- 1472US8809971B2Semiconductor componentSCHULZE HANS-JOACHIM·Filed 2010·Granted Aug 19, 2014·3 cites·17 claims
- 1570US10566462B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS JOACHIM·Filed 2009·Granted Feb 18, 2020·4 cites·32 claims
- 1669US8866255B2Semiconductor device with staggered oxide-filled trenches at edge regionSCHULZE HANS-JOACHIM·Filed 2009·Granted Oct 21, 2014·3 cites·7 claims
- 1769US8779462B2High-ohmic semiconductor substrate and a method of manufacturing the sameSCHULZE HANS-JOACHIM·Filed 2008·Granted Jul 15, 2014·2 cites·32 claims
- 1868US8828810B2Method of producing a semiconductor including two differently doped semiconductor zonesSCHULZE HANS-JOACHIM·Filed 2012·Granted Sep 9, 2014·2 cites·9 claims
- 1965US10651037B2Method for fabricating a doped zone in a semiconductor bodySCHULZE HANS JOACHIM·Filed 2005·Granted May 12, 2020·2 cites·12 claims
- 2064US9153674B2Insulated gate bipolar transistorSCHULZE HANS-JOACHIM·Filed 2009·Granted Oct 6, 2015·2 cites·7 claims
- 2164US8883612B2Method for manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2011·Granted Nov 11, 2014·1 cites·16 claims
- 2263US9269769B2Semiconductor component including a short-circuit structureSCHULZE HANS-JOACHIM·Filed 2008·Granted Feb 23, 2016·1 cites·25 claims
- 2363US8889531B2Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region betweenSCHULZE HANS-JOACHIM·Filed 2011·Granted Nov 18, 2014·1 cites·10 claims
- 2459US8159022B2Robust semiconductor device with an emitter zone and a field stop zoneSCHULZE HANS-JOACHIM·Filed 2008·Granted Apr 17, 2012·1 cites·15 claims
- 2556US8647968B2Method for producing a semiconductor layerSCHULZE HANS-JOACHIM·Filed 2009·Granted Feb 11, 2014·0 cites·25 claims
- 2654US8785997B2Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 22, 2014·0 cites·15 claims
- 2754US2012223420A1Semiconductor body with a buried material layerSCHULZE HANS-JOACHIM·Filed 2012·Application pending·0 cites
- 2853US8466046B2Method for fabricating a porous semiconductor body regionSCHULZE HANS-JOACHIM·Filed 2012·Granted Jun 18, 2013·0 cites·15 claims
- 2949US9306010B2Semiconductor arrangementSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 5, 2016·0 cites·21 claims
- 3049US2014001514A1Semiconductor Device and Method for Producing a Doped Semiconductor LayerSCHULZE HANS-JOACHIM·Filed 2012·Application pending·0 cites
- 3148US8415710B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Apr 9, 2013·0 cites·20 claims
- 3245US8592903B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2008·Granted Nov 26, 2013·0 cites·15 claims
Join the waitlist — get patent alerts
Get an alert when SCHULZE HANS-JOACHIM files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →