Semiconductor body with a buried material layer

Abstract

One aspect includes a semiconductor arrangement with a semiconductor body having a first surface. A buried material layer is in the semiconductor body, the buried material layer being arranged distant to the first surface. A monocrystalline semiconductor material is arranged between the material layer and the first surface, and a monocrystalline semiconductor material adjoins the material layer in a lateral direction of the semiconductor body.

1 . A semiconductor arrangement comprising:
 a semiconductor body having a first surface;   a buried material layer in the semiconductor body;   the buried material layer being arranged distant to the first surface, a monocrystalline semiconductor material being arranged between the material layer and the first surface, and a monocrystalline semiconductor material adjoining the material layer in a lateral direction of the semiconductor body.   
     
     
         2 . The semiconductor arrangement of  claim 1 , wherein the buried material layer is completely surrounded by a monocrystalline semiconductor material in the semiconductor body. 
     
     
         3 . The semiconductor arrangement of  claim 1 , wherein the semiconductor body has a first surface and the first material layer is essentially parallel to the first surface. 
     
     
         4 . The semiconductor arrangement of  claim 1 , wherein the material layer is a dielectric layer. 
     
     
         5 . The semiconductor arrangement of  claim 1 , wherein the material layer comprises a number of first and second material layers that are arranged next to one another in the lateral direction. 
     
     
         6 . The semiconductor arrangement of  claim 1 , further comprising:
 a further material layer adjoining the material layer and extending in a vertical direction.   
     
     
         7 . The semiconductor arrangement of  claim 6 , wherein the further material extends to the first surface and completely surrounds a semiconductor region between the material layer and the first side.