Inventor · disambiguated record
Hans-Joachim Schulze
Also filed as: SCHULZE HANS-JOACHIM
616 granted patents·84 pending applications·1,833 citations·filing 1987–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AG442INFINEON TECHNOLOGIES AUSTRIA77INFINEON TECHNOLOGIES AUSTRIA AG55SCHULZE HANS-JOACHIM32MAUDER ANTON20
Top patents by PatentIndex Score
700 records- 0198US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0297US7879699B2Wafer and a method for manufacturing a waferINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 1, 2011·66 cites·10 claims
- 0395US9917186B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·9 cites·14 claims
- 0495US9786748B2Semiconductor device, silicon wafer and silicon ingotINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 10, 2017·8 cites·6 claims
- 0595US8222681B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Jul 17, 2012·20 cites·4 claims
- 0694US11081393B2Method for splitting semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 3, 2021·7 cites·29 claims
- 0794US9024413B2Semiconductor device with IGBT cell and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 5, 2015·10 cites·8 claims
- 0894US7781294B2Method for producing an integrated circuit including a semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 24, 2010·27 cites·26 claims
- 0994US7514750B2Semiconductor device and fabrication method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·22 cites·10 claims
- 1094US7361970B2Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·21 cites·13 claims
- 1193US11107893B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 31, 2021·6 cites·20 claims
- 1293US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 1392US10903078B2Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·9 cites·28 claims
- 1492US10332973B2N-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 1592US8822306B2Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite coreBERGER RUDOLF·Filed 2011·Granted Sep 2, 2014·16 cites·24 claims
- 1692US8772126B2Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 8, 2014·11 cites·13 claims
- 1792US8120074B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2009·Granted Feb 21, 2012·23 cites·17 claims
- 1892US6504230B2Compensation component and method for fabricating the compensation componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 7, 2003·63 cites·5 claims
- 1991US11031483B2Forming semiconductor devices in silicon carbideINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 8, 2021·4 cites·24 claims
- 2091US9012980B1Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·11 cites·20 claims
- 2191US8466492B1Semiconductor device with edge termination structureMAUDER ANTON·Filed 2012·Granted Jun 18, 2013·12 cites·24 claims
- 2291US8008712B2Metallization and its use in, in particular, an IGBT or a diodeINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 30, 2011·14 cites·37 claims
- 2390US9054035B2Increasing the doping efficiency during proton irradiationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 9, 2015·8 cites·7 claims
- 2490US8866221B2Super junction semiconductor device comprising a cell area and an edge areaHIRLER FRANZ·Filed 2012·Granted Oct 21, 2014·12 cites·26 claims
- 2590US8361893B2Semiconductor device and substrate with chalcogen doped regionINFINEON TECHNOLOGIES AG·Filed 2011·Granted Jan 29, 2013·10 cites·17 claims
- 2690US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 2790US7982289B2Wafer and a method for manufacturing a waferINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jul 19, 2011·8 cites·18 claims
- 2890US7491629B2Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2005·Granted Feb 17, 2009·15 cites·12 claims
- 2990US7470952B2Power IGBT with increased robustnessINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 30, 2008·22 cites·10 claims
- 3089US11476111B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 18, 2022·2 cites·13 claims
- 3189US10134848B2Semiconductor device having a graphene layer, and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·21 claims
- 3289US9691892B2High voltage transistor operable with a high gate voltageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jun 27, 2017·7 cites·16 claims
- 3389US9653540B2Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted May 16, 2017·5 cites·14 claims
- 3489US9647083B2Producing a semiconductor device by epitaxial growthINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 9, 2017·6 cites·14 claims
- 3589US9621133B2Method of operating a semiconductor device having an IGBT and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 11, 2017·4 cites·5 claims
- 3689US8779509B2Semiconductor device including an edge area and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 15, 2014·7 cites·15 claims
- 3789US8587025B1Method for forming laterally varying doping concentrations and a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Nov 19, 2013·10 cites·19 claims
- 3889US7582531B2Method for producing a buried semiconductor layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Sep 1, 2009·15 cites·13 claims
- 3988US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 4088US9876100B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 4188US9704750B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 11, 2017·5 cites·20 claims
- 4288US9245811B2Method for postdoping a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 26, 2016·7 cites·17 claims
- 4388US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 4488US9012311B2Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor componentPFIRSCH FRANK·Filed 2008·Granted Apr 21, 2015·9 cites·15 claims
- 4588US8853774B2Semiconductor device including trenches and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2012·Granted Oct 7, 2014·14 cites·25 claims
- 4688US8093677B2Semiconductor device and manufacturing methodSTECHER MATTHIAS·Filed 2009·Granted Jan 10, 2012·11 cites·17 claims
- 4788US7989888B2Semiconductor device with a field stop zone and process of producing the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Aug 2, 2011·13 cites·15 claims
- 4888US7923772B2Semiconductor device with a semiconductor body and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Apr 12, 2011·15 cites·24 claims
- 4987US11887894B2Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layersINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
- 5087US11742215B2Methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·1 cites·16 claims
Showing the top 50 of 700 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →