Inventor · disambiguated record
Anton Mauder
Also filed as: MAUDER ANTON
302 granted patents·51 pending applications·1,027 citations·filing 2001–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AG128INFINEON TECHNOLOGIES AUSTRIA AG71INFINEON TECHNOLOGIES AUSTRIA69MAUDER ANTON34SCHULZE HANS-JOACHIM9
Top patents by PatentIndex Score
353 records- 0196US8835978B2Lateral transistor on polymerMAUDER ANTON·Filed 2012·Granted Sep 16, 2014·84 cites·25 claims
- 0295US9853637B1Dual gate switch deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Dec 26, 2017·14 cites·19 claims
- 0394US7781294B2Method for producing an integrated circuit including a semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 24, 2010·27 cites·26 claims
- 0494US7514750B2Semiconductor device and fabrication method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·22 cites·10 claims
- 0594US7361970B2Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·21 cites·13 claims
- 0693US9368617B2Superjunction device and semiconductor structure comprising the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 14, 2016·13 cites·4 claims
- 0793US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0892US9859408B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·6 cites·17 claims
- 0992US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 1092US8822306B2Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite coreBERGER RUDOLF·Filed 2011·Granted Sep 2, 2014·16 cites·24 claims
- 1192US8772126B2Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 8, 2014·11 cites·13 claims
- 1292US6504230B2Compensation component and method for fabricating the compensation componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 7, 2003·63 cites·5 claims
- 1391US10326009B2Power semiconductor transistor having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·5 cites·23 claims
- 1491US8466492B1Semiconductor device with edge termination structureMAUDER ANTON·Filed 2012·Granted Jun 18, 2013·12 cites·24 claims
- 1591US7436023B2High blocking semiconductor component comprising a drift sectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 14, 2008·20 cites·49 claims
- 1690US10818749B2Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 27, 2020·6 cites·11 claims
- 1790US10141404B2Power semiconductor device having fully depleted channel regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 27, 2018·6 cites·21 claims
- 1890US8854065B2Current measurement in a power transistorMAUDER ANTON·Filed 2012·Granted Oct 7, 2014·12 cites·29 claims
- 1989US11011606B2Semiconductor component having a SiC semiconductor body and method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 18, 2021·3 cites·13 claims
- 2089US9691892B2High voltage transistor operable with a high gate voltageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jun 27, 2017·7 cites·16 claims
- 2189US8779509B2Semiconductor device including an edge area and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 15, 2014·7 cites·15 claims
- 2289US8742539B2Semiconductor component and method for producing a semiconductor componentWEYERS JOACHIM·Filed 2012·Granted Jun 3, 2014·14 cites·27 claims
- 2389US7709891B2Component arrangement including a power semiconductor component having a drift control zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 4, 2010·16 cites·22 claims
- 2488US10134835B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·22 claims
- 2588US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 2688US7923772B2Semiconductor device with a semiconductor body and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Apr 12, 2011·15 cites·24 claims
- 2787US8367532B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2012·Granted Feb 5, 2013·5 cites·23 claims
- 2887US7696600B2IGBT device and related device having robustness under extreme conditionsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Apr 13, 2010·13 cites·6 claims
- 2986US10254327B2Method and device for short circuit detection in power semiconductor switchesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 9, 2019·3 cites·14 claims
- 3086US8958189B1High-voltage semiconductor switch and method for switching high voltagesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 17, 2015·8 cites·20 claims
- 3186US8541833B2Power transistor device vertical integrationSCHULZE HANS-JOACHIM·Filed 2011·Granted Sep 24, 2013·8 cites·14 claims
- 3285US10109489B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 23, 2018·3 cites·26 claims
- 3385US8921931B2Semiconductor device with trench structures including a recombination structure and a fill structureMAUDER ANTON·Filed 2012·Granted Dec 30, 2014·6 cites·20 claims
- 3485US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 3585US8198678B2Semiconductor device with improved on-resistanceMAUDER ANTON·Filed 2009·Granted Jun 12, 2012·8 cites·26 claims
- 3684US10566426B2Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 18, 2020·4 cites·27 claims
- 3784US9576844B2Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite coreINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·3 cites·17 claims
- 3884US9209292B2Charge compensation semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 3984US8933533B2Solid-state bidirectional switch having a first and a second power-FETMAUDER ANTON·Filed 2012·Granted Jan 13, 2015·7 cites·27 claims
- 4084US8786012B2Power semiconductor device and a method for forming a semiconductor deviceMAUDER ANTON·Filed 2012·Granted Jul 22, 2014·5 cites·15 claims
- 4184US8247874B2Depletion MOS transistor and charging arrangementHIRLER FRANZ·Filed 2010·Granted Aug 21, 2012·7 cites·24 claims
- 4284US7821033B2Semiconductor component comprising a drift zone and a drift control zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 26, 2010·11 cites·13 claims
- 4384US7554137B2Power semiconductor component with charge compensation structure and method for the fabrication thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·8 cites·29 claims
- 4483US10665706B2Power semiconductor transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 26, 2020·2 cites·20 claims
- 4583US10491207B2Method of over current and over voltage protection of a power switch in combination with regulated DI/DT and DV/DTINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Nov 26, 2019·3 cites·18 claims
- 4683US9929181B2Method for manufacturing an electronic device and method for operating an electronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Mar 27, 2018·3 cites·5 claims
- 4783US9923066B2Wide bandgap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 20, 2018·4 cites·25 claims
- 4883US9401355B2Semiconductor device including a diode arranged in a trenchWEYERS JOACHIM·Filed 2011·Granted Jul 26, 2016·6 cites·29 claims
- 4983US9245760B2Methods of forming epitaxial layers on a porous semiconductor layerMAUDER ANTON·Filed 2010·Granted Jan 26, 2016·5 cites·14 claims
- 5083US6441408B2Power semiconductor component for high reverse voltagesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·35 cites·25 claims
Showing the top 50 of 353 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →