Assignee
SEMI SOLUTIONS LLC
US·8 granted patents·1 pending application·55 citations·filing 2004–2016
Top patents by PatentIndex Score
9 records- 0190US7586155B2Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistorsSEMI SOLUTIONS LLC·Filed 2007·Granted Sep 8, 2009·16 cites·14 claims
- 0290US7224205B2Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistorsSEMI SOLUTIONS LLC·Filed 2005·Granted May 29, 2007·17 cites·12 claims
- 0389US8048732B2Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistorSEMI SOLUTIONS LLC·Filed 2010·Granted Nov 1, 2011·10 cites·20 claims
- 0484US7691702B2Method of manufacture of an apparatus for increasing stability of MOS memory cellsSEMI SOLUTIONS LLC·Filed 2008·Granted Apr 6, 2010·6 cites·13 claims
- 0566US7651905B2Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contactsSEMI SOLUTIONS LLC·Filed 2005·Granted Jan 26, 2010·3 cites·11 claims
- 0648US9379214B2Reduced variation MOSFET using a drain-extension-last processSEMI SOLUTIONS LLC·Filed 2015·Granted Jun 28, 2016·0 cites·19 claims
- 0748US2016260816A1Reduced Variation MOSFET Using a Drain-Extension-Last ProcessSEMI SOLUTIONS LLC·Filed 2016·Application pending·0 cites
- 0847US7375402B2Method and apparatus for increasing stability of MOS memory cellsSEMI SOLUTIONS LLC·Filed 2004·Granted May 20, 2008·3 cites·5 claims
- 0945US7863689B2Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistorSEMI SOLUTIONS LLC·Filed 2009·Granted Jan 4, 2011·0 cites·9 claims
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