Assignee
SEMICONDUCTOR MFG INT SHANGHAI
CN·348 granted patents·74 pending applications·1,102 citations·filing 2002–2016
Top patents by PatentIndex Score
422 records- 0197US8883585B1Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Nov 11, 2014·32 cites·20 claims
- 0297US8809173B1Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Aug 19, 2014·33 cites·14 claims
- 0395US9029211B2Nano field-effect vacuum tube and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted May 12, 2015·17 cites·14 claims
- 0494US7897454B2Metal-insulator-metal capacitor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted Mar 1, 2011·93 cites·6 claims
- 0591US9287387B2Static memory cell and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Mar 15, 2016·6 cites·17 claims
- 0690US9368497B2Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jun 14, 2016·7 cites·15 claims
- 0790US9257538B2Fin-type field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Feb 9, 2016·9 cites·17 claims
- 0890US9093508B1Nano field-effect vacuum tubeSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jul 28, 2015·6 cites·10 claims
- 0989US9316925B2Methods for monitoring source symmetry of photolithography systemsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Apr 19, 2016·7 cites·20 claims
- 1089US7427552B2Method for fabricating isolation structures for flash memory semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Sep 23, 2008·47 cites·12 claims
- 1189US7335543B2MOS device for high voltage operation and method of manufactureSEMICONDUCTOR MFG INT SHANGHAI·Filed 2004·Granted Feb 26, 2008·52 cites·9 claims
- 1288US9362331B2Method and system for image sensor and lens on a silicon back plane waferSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 7, 2016·3 cites·19 claims
- 1388US8772148B1Metal gate transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Jul 8, 2014·11 cites·13 claims
- 1488US7868367B2System and method for CMOS image sensingSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Jan 11, 2011·12 cites·19 claims
- 1587US9190481B2Transistors and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Nov 17, 2015·7 cites·15 claims
- 1687US7456067B2Method with high gapfill capability for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Nov 25, 2008·12 cites·16 claims
- 1786US9054193B2Fin field-effect transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 9, 2015·6 cites·19 claims
- 1886US7372339B2Phase lock loop indicatorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted May 13, 2008·19 cites·9 claims
- 1985US7820500B2Single mask scheme method and structure for integrating PMOS and NMOS transistors using strained siliconSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Oct 26, 2010·12 cites·20 claims
- 2085US7425488B2Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Sep 16, 2008·12 cites·17 claims
- 2184US9190331B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Nov 17, 2015·4 cites·14 claims
- 2284US8373272B2Device under bonding pad using single metallizationSEMICONDUCTOR MFG INT SHANGHAI·Filed 2009·Granted Feb 12, 2013·15 cites·18 claims
- 2384US7625796B2Semiconductor device with amorphous silicon MONOS memory cell structure and method for manufacturing thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Dec 1, 2009·9 cites·18 claims
- 2484US7547595B2Integration scheme method and structure for transistors using strained siliconSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Jun 16, 2009·13 cites·20 claims
- 2584US7352210B2Device and method for voltage regulator with stable and fast response and low standby currentSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Apr 1, 2008·11 cites·18 claims
- 2683US9337107B2Semiconductor device and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted May 10, 2016·4 cites·20 claims
- 2783US9331079B2Semiconductor device and method of manufacturing the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted May 3, 2016·4 cites·19 claims
- 2883US9299619B2Method for manufacturing CMOS device with high-k dielectric layers and high-k cap layers formed in different stepsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Mar 29, 2016·5 cites·20 claims
- 2983US9206030B2MEMS capacitive pressure sensors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Dec 8, 2015·3 cites·9 claims
- 3083US9153585B2Tunneling field effect transistor device and related manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Oct 6, 2015·4 cites·9 claims
- 3183US8822234B2Method of fabricating a semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI·Filed 2012·Granted Sep 2, 2014·6 cites·20 claims
- 3283US7847288B2Method and resulting structure for fabricating test key structures in DRAM structuresSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Dec 7, 2010·7 cites·10 claims
- 3382US9324671B2Metal pillar bump packaging strctures and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Apr 26, 2016·4 cites·19 claims
- 3481US8383445B2Method and device for CMOS image sensing with multiple gate oxide thicknessesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Granted Feb 26, 2013·6 cites·11 claims
- 3581US7709336B2Metal hard mask method and structure for strained silicon MOS transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted May 4, 2010·8 cites·15 claims
- 3680US9368409B2Semiconductor structure and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Jun 14, 2016·2 cites·20 claims
- 3780US7053490B1Planar bond pad design and method of making the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted May 30, 2006·8 cites·14 claims
- 3879US9053944B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 9, 2015·4 cites·20 claims
- 3979US9024667B1Self-biased phase lock loopSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted May 5, 2015·6 cites·19 claims
- 4079US7892904B2Amorphous silicon MONOS or MAS memory cell structure with OTP functionSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Feb 22, 2011·5 cites·19 claims
- 4179US7887884B2Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Feb 15, 2011·3 cites·23 claims
- 4279US7591659B2Method and structure for second spacer formation for strained silicon MOS transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Sep 22, 2009·9 cites·18 claims
- 4379US7569487B2Method for atomic layer deposition of materials using a pre-treatment for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Aug 4, 2009·3 cites·19 claims
- 4478US9029212B2MEMS pressure sensors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted May 12, 2015·3 cites·8 claims
- 4578US7709386B2Atomic layer deposition method and semiconductor device formed by the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted May 4, 2010·6 cites·29 claims
- 4678US7649173B2Method of preparing a sample for transmission electron microscopySEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Jan 19, 2010·8 cites·15 claims
- 4777US9332626B1EUV light source and exposure apparatusSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted May 3, 2016·2 cites·20 claims
- 4877US9070620B2Method of fabricating dual trench isolated selective epitaxial diode arraySEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 30, 2015·4 cites·14 claims
- 4976US9224812B2System and method for integrated circuits with cylindrical gate structuresSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Dec 29, 2015·3 cites·24 claims
- 5076US9129831B2Resistor memory bit-cell and circuitry and method of making the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Sep 8, 2015·3 cites·18 claims
Showing the top 50 of 422 patent records by PatentIndex Score.
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