Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices

Abstract

A method for atomic layer deposition. The method includes providing a substrate having a surface region and exposing the surface region of the substrate to an atmospheric pressure. The method also maintains at least the substrate at about the atmospheric pressure and forms a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure. Preferably, the film is grown at a rate of greater than about 1 nanometer per minute.

1. A method for atomic layer deposition, the method comprising:
 placing a plurality of substrates into a cassette; 
 removing one of the substrates; 
 applying the one substrate on a moving member, the moving member being coupled to a plurality of gas distribution members numbered from 1 through N, where N is an integer; 
 moving the substrate via the moving member to expose a surface of the substrate to one or more of the gas distribution members in a serial manner from the first gas distribution member to the Nth gas distribution member; and 
 forming an atomic layer film overlying the surface as the surface moves on the moving member and is facing one or more of the plurality of gas distribution members, 
 wherein the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than 1, each of the groups including a set of gas distribution members arranged in a same serial configuration numbered from 1 through N, and the substrate is moved from the first group to the Mth group via the moving member in a serial manner and in a first direction, 
 wherein each of the plurality of groups comprises at least a reactant gas distribution member and an inert gas distribution member, and 
 wherein the moving member comprises a silicon carbide coated carbon material. 
 
     
     
       2. The method of  claim 1  wherein the exposed substrate is maintained at about atmospheric pressure. 
     
     
       3. The method of  claim 1  wherein the moving member is a belt coupled to a rotatable device. 
     
     
       4. The method of  claim 1  wherein the substrate is a semiconductor wafer or an LCD substrate. 
     
     
       5. The method of  claim 1  wherein the exposed substrate is maintained at about atmospheric pressure as the one substrate traverses via the moving member. 
     
     
       6. The method of  claim 1  wherein the atomic layer film is an AlO deposited using at least trimethyl aluminum (TMA) and ozone as reactant species. 
     
     
       7. The method of  claim 1  wherein the atomic layer film is a semiconductor, a metal, and/or dielectrics. 
     
     
       8. The method of  claim 6  wherein the substrate is maintained at a temperature of about 450 Degrees Celsius for deposition of the AlO film. 
     
     
       9. The method of  claim 1  wherein the moving member is coupled to a plurality of lamp modules. 
     
     
       10. The method of  claim 1  wherein the atomic layer film is defined by layer by layer deposited film. 
     
     
       11. A method for atomic layer deposition under atmospheric conditions, the method comprising:
 placing a plurality of substrates into a cassette; 
 removing one of the substrates; 
 applying the one substrate on a moving member, the moving member being coupled to a plurality of gas distribution members, the plurality of gas distribution members being numbered from 1 through N, where N is an integer; 
 moving the substrate via the moving member to expose a surface of the substrate to one or more for the gas distribution members in an serial manner from the first gas distribution member to the Nth gas distribution member; 
 maintaining the substrate at about an atmospheric pressure; and 
 forming an atomic layer film overlying the surface as the surface moves on the moving member while being maintained at atmospheric pressure; 
 wherein the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than 1, each of the groups including a same set of the gas distribution members arranged in a same serial configuration, and the substrate is moved from the first group to the Mth group via the moving member in a serial manner and in a first direction, 
 wherein each of the plurality of groups comprises at least a reactant gas distribution member and an inert gas distribution member, and 
 wherein the moving member comprises a silicon carbide coated carbon material. 
 
     
     
       12. The method of  claim 11  wherein the substrate moves via the moving member at a rate of about 10 cm/min, to about 30 cm/min. 
     
     
       13. The method of  claim 11  wherein the substrate is a semiconductor wafer or an LCD panel. 
     
     
       14. The method of  claim 11  wherein the atomic layer film comprises AlO. 
     
     
       15. The method of  claim 11  wherein one or more of the gas distribution members provide a precursor gas. 
     
     
       16. The method of  claim 11  wherein one or more of the gas distribution members provide a purge gas. 
     
     
       17. The method of  claim 16  wherein the nitridizer comprises N2H2. 
     
     
       18. The method of  claim 16  wherein the purge gas is selected from argon or helium. 
     
     
       19. The method of  claim 11  wherein one or more of the gas distribution members provide a nitridizer. 
     
     
       20. The method of  claim 11  wherein one or more of the gas distribution members provide an oxidizer. 
     
     
       21. The method of  claim 20  wherein the oxidizer is selected from ozone or H2O. 
     
     
       22. The method of  claim 11  wherein the gas distribution members provide laminar flow over the exposed surface of the substrate. 
     
     
       23. A method for atomic layer deposition, the method comprising:
 providing a substrate having a surface region; 
 exposing the surface region of the substrate to an atmospheric pressure; 
 maintaining the substrate at about the atmospheric pressure; and 
 forming a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure to enhance a deposition rate of the film to more than 1 nanometers per minute, 
 wherein the atomic layer deposition is provided by applying the substrate on a moving member, the substrate being exposed to a plurality of gas distribution members, the plurality of gas distribution members being arranged in a serial manner numbered from 1 through N, where N is an integer, the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than one, each of the groups includes a same set of gas distribution members arranged in a same serial manner, and the substrate is moved from the first group to the Mth group in a first direction via the moving member in a serial manner, 
 wherein each group comprises an argon distribution member, a Me 3 Al (TMA) a distribution member, and another argon distribution member.