Assignee
SEMISOUTH LAB INC
US·19 granted patents·1 pending application·289 citations·filing 2004–2010
Top patents by PatentIndex Score
20 records- 0197US8017981B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2010·Granted Sep 13, 2011·31 cites·24 claims
- 0296US7416929B2Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the sameSEMISOUTH LAB INC·Filed 2007·Granted Aug 26, 2008·42 cites·13 claims
- 0393US7274083B1Semiconductor device with surge current protection and method of making the sameSEMISOUTH LAB INC·Filed 2006·Granted Sep 25, 2007·28 cites·14 claims
- 0490US7977713B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Jul 12, 2011·16 cites·24 claims
- 0590US7638379B2Vertical-channel junction field-effect transistors having buried gates and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Dec 29, 2009·16 cites·14 claims
- 0690US7556994B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Jul 7, 2009·18 cites·28 claims
- 0788US7560325B1Methods of making lateral junction field effect transistors using selective epitaxial growthSEMISOUTH LAB INC·Filed 2008·Granted Jul 14, 2009·17 cites·29 claims
- 0887US7602228B2Half-bridge circuits employing normally on switches and methods of preventing unintended current flow thereinSEMISOUTH LAB INC·Filed 2007·Granted Oct 13, 2009·20 cites·14 claims
- 0985US7820511B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Oct 26, 2010·10 cites·12 claims
- 1084US7314799B2Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2005·Granted Jan 1, 2008·9 cites·33 claims
- 1184US7202528B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2004·Granted Apr 10, 2007·31 cites·90 claims
- 1282US7242040B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2006·Granted Jul 10, 2007·9 cites·15 claims
- 1381US7907001B2Half-bridge circuits employing normally on switches and methods of preventing unintended current flow thereinSEMISOUTH LAB INC·Filed 2009·Granted Mar 15, 2011·12 cites·11 claims
- 1478US7821015B2Silicon carbide and related wide-bandgap transistors on semi insulating epitaxySEMISOUTH LAB INC·Filed 2007·Granted Oct 26, 2010·5 cites·18 claims
- 1571US7969226B2High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the sameSEMISOUTH LAB INC·Filed 2009·Granted Jun 28, 2011·6 cites·22 claims
- 1671US7119380B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2004·Granted Oct 10, 2006·14 cites·12 claims
- 1765US7994548B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Aug 9, 2011·2 cites·19 claims
- 1860US7510921B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 1955US7470967B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2005·Granted Dec 30, 2008·1 cites·13 claims
- 2049US2008061362A1Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2007·Application pending·0 cites
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