Assignee
SHIBATA NOBORU
JP·28 granted patents·2 pending applications·187 citations·filing 2008–2012
Top patents by PatentIndex Score
30 records- 0197US8619468B2Semiconductor memory device for storing multivalued dataSHIBATA NOBORU·Filed 2012·Granted Dec 31, 2013·19 cites·8 claims
- 0296US8310871B2Semiconductor memory device for storing multivalued dataSHIBATA NOBORU·Filed 2011·Granted Nov 13, 2012·15 cites·11 claims
- 0396US8154930B2Semiconductor memory device which stores plural data in a cellSHIBATA NOBORU·Filed 2010·Granted Apr 10, 2012·17 cites·4 claims
- 0495US8971130B2Semiconductor memory device capable of shortening erase timeSHIBATA NOBORU·Filed 2012·Granted Mar 3, 2015·13 cites·10 claims
- 0595US8264894B2Semiconductor memory device capable of memorizing multivalued dataSHIBATA NOBORU·Filed 2011·Granted Sep 11, 2012·16 cites·6 claims
- 0692US8593880B2Semiconductor memory system including a plurality of semiconductor memory devicesSHIBATA NOBORU·Filed 2012·Granted Nov 26, 2013·8 cites·5 claims
- 0792US8077514B2Semiconductor memory device capable of memorizing multivalued dataSHIBATA NOBORU·Filed 2010·Granted Dec 13, 2011·11 cites·8 claims
- 0891US8432748B2Semiconductor memory device capable of memorizing multivalued dataSHIBATA NOBORU·Filed 2012·Granted Apr 30, 2013·10 cites·11 claims
- 0989US8625356B2High-speed verifiable semiconductor memory deviceSHIBATA NOBORU·Filed 2012·Granted Jan 7, 2014·7 cites·5 claims
- 1088US8284607B2Semiconductor memory system including a plurality of semiconductor memory devicesSHIBATA NOBORU·Filed 2009·Granted Oct 9, 2012·10 cites·5 claims
- 1188US8270214B2Nonvolatile semiconductor memory deviceSHIBATA NOBORU·Filed 2010·Granted Sep 18, 2012·10 cites·4 claims
- 1284US8861298B2Semiconductor storage system capable of suppressing peak currentSHIBATA NOBORU·Filed 2011·Granted Oct 14, 2014·9 cites·11 claims
- 1380US8116134B2Semiconductor memory device with improved ECC efficiencySHIBATA NOBORU·Filed 2008·Granted Feb 14, 2012·10 cites·14 claims
- 1478US8482976B2Semiconductor memory device and semiconductor memory system storing multilevel dataSHIBATA NOBORU·Filed 2009·Granted Jul 9, 2013·10 cites·20 claims
- 1576US8203889B2High-speed verifiable semiconductor memory deviceSHIBATA NOBORU·Filed 2011·Granted Jun 19, 2012·3 cites·7 claims
- 1675US8687420B2Nonvolatile semiconductor memory deviceSHIBATA NOBORU·Filed 2012·Granted Apr 1, 2014·4 cites·6 claims
- 1772US8730741B2Semiconductor memory system capable of suppressing consumption currentSHIBATA NOBORU·Filed 2012·Granted May 20, 2014·4 cites·13 claims
- 1872US8189389B2Nonvolatile semiconductor memory device with a voltage setting circuit for a step-up shift testSHIBATA NOBORU·Filed 2011·Granted May 29, 2012·2 cites·7 claims
- 1970US8406054B2Semiconductor memory device with improved ECC efficiencySHIBATA NOBORU·Filed 2012·Granted Mar 26, 2013·3 cites·9 claims
- 2066US9263131B2High-speed readable semiconductor storage deviceSHIBATA NOBORU·Filed 2012·Granted Feb 16, 2016·2 cites·16 claims
- 2164US8335114B2Semiconductor memory device capable of shortening erase timeSHIBATA NOBORU·Filed 2011·Granted Dec 18, 2012·1 cites·16 claims
- 2256US8331148B2Semiconductor memory device capable of lowering a write voltageSHIBATA NOBORU·Filed 2011·Granted Dec 11, 2012·1 cites·9 claims
- 2354US8149629B2Semiconductor storage device adapted to prevent erroneous writing to non-selected memory cellsSHIBATA NOBORU·Filed 2009·Granted Apr 3, 2012·2 cites·20 claims
- 2451US8885408B2Nonvolatile semiconductor memory device for rendering the same in a busy state after inputting data thereinSHIBATA NOBORU·Filed 2012·Granted Nov 11, 2014·0 cites·2 claims
- 2547US8406056B2Semiconductor memory device capable of increasing writing speedSHIBATA NOBORU·Filed 2011·Granted Mar 26, 2013·0 cites·8 claims
- 2646US8098524B2Semiconductor memory device capable of increasing writing speedSHIBATA NOBORU·Filed 2011·Granted Jan 17, 2012·0 cites·13 claims
- 2745US8289783B2Semiconductor memory device capable of suppressing peak currentSHIBATA NOBORU·Filed 2010·Granted Oct 16, 2012·0 cites·4 claims
- 2843US8416629B2Semiconductor storage device adapted to prevent erroneous writing to non-selected memory cellsSHIBATA NOBORU·Filed 2012·Granted Apr 9, 2013·0 cites·8 claims
- 2940US2012268978A1Semiconductor memory device in which capacitance between bit lines is reduced, and method of manufacturing the sameSHIBATA NOBORU·Filed 2012·Application pending·0 cites
- 3035US2012201079A1Semiconductor memory device in which capacitance between bit lines is reduced, and method of manufacturing the sameSHIBATA NOBORU·Filed 2011·Application pending·0 cites
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