Assignee
SILTRON INC
KR·33 granted patents·18 pending applications·181 citations·filing 2000–2011
Top patents by PatentIndex Score
51 records- 0191US7559988B2Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingotSILTRON INC·Filed 2006·Granted Jul 14, 2009·9 cites·11 claims
- 0289US6884694B2Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the sameSILTRON INC·Filed 2003·Granted Apr 26, 2005·52 cites·27 claims
- 0388US7416603B2High quality single crystal and method of growing the sameSILTRON INC·Filed 2005·Granted Aug 26, 2008·6 cites·11 claims
- 0485US7371283B2Method and apparatus of growing silicon single crystal and silicon wafer fabricated therebySILTRON INC·Filed 2005·Granted May 13, 2008·4 cites·6 claims
- 0584US6527859B2Apparatus for growing a single crystalline ingotSILTRON INC·Filed 2001·Granted Mar 4, 2003·24 cites·26 claims
- 0683US7615470B2Method of manufacturing gallium nitride semiconductorSILTRON INC·Filed 2005·Granted Nov 10, 2009·7 cites·10 claims
- 0782US7608145B2Method and apparatus of growing silicon single crystal and silicon wafer fabricated therebySILTRON INC·Filed 2007·Granted Oct 27, 2009·3 cites·15 claims
- 0880US7261099B2Apparatus and method for slicing an ingotSILTRON INC·Filed 2005·Granted Aug 28, 2007·8 cites·5 claims
- 0979US7708832B2Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrateSILTRON INC·Filed 2008·Granted May 4, 2010·6 cites·6 claims
- 1076US8349075B22-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus thereforSILTRON INC·Filed 2011·Granted Jan 8, 2013·1 cites·9 claims
- 1174US7723217B2Method for manufacturing gallium nitride single crystalline substrate using self-splitSILTRON INC·Filed 2008·Granted May 25, 2010·4 cites·15 claims
- 1272US7799130B2Silicon single crystal ingot and wafer, growing apparatus and method thereofSILTRON INC·Filed 2006·Granted Sep 21, 2010·2 cites·13 claims
- 1372US7326292B2Quality evaluation method for single crystal ingotSILTRON INC·Filed 2006·Granted Feb 5, 2008·5 cites·11 claims
- 1468US6521316B2single crystalline silicon wafer, ingot, and producing method thereofSILTRON INC·Filed 2000·Granted Feb 18, 2003·11 cites·16 claims
- 1565US7353818B2Apparatus and method for slicing an ingotSILTRON INC·Filed 2007·Granted Apr 8, 2008·2 cites·4 claims
- 1665US7242075B2Silicon wafers and method of fabricating the sameSILTRON INC·Filed 2003·Granted Jul 10, 2007·9 cites·15 claims
- 1764US7816241B2Method for preparing compound semiconductor substrateSILTRON INC·Filed 2008·Granted Oct 19, 2010·1 cites·9 claims
- 1864US7378071B2Silicon wafer and method for producing silicon single crystalSILTRON INC·Filed 2005·Granted May 27, 2008·1 cites·6 claims
- 1964US6574264B2Apparatus for growing a silicon ingotSILTRON INC·Filed 2001·Granted Jun 3, 2003·5 cites·7 claims
- 2059US6818569B2Method of fabricating annealed waferSILTRON INC·Filed 2002·Granted Nov 16, 2004·8 cites·2 claims
- 2159US2010158781A1Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingotSILTRON INC·Filed 2009·Application pending·0 cites
- 2258US2009272948A1High Quality Single Crystal and Method of Growing the SameSILTRON INC·Filed 2008·Application pending·0 cites
- 2357US6858077B2Single crystalline silicon wafer, ingot, and producing method thereofSILTRON INC·Filed 2002·Granted Feb 22, 2005·5 cites·13 claims
- 2456US7125608B2Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making sameSILTRON INC·Filed 2004·Granted Oct 24, 2006·3 cites·13 claims
- 2556US6899760B2Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereofSILTRON INC·Filed 2002·Granted May 31, 2005·4 cites·9 claims
- 2655US7915698B2Nitride semiconductor substrate having a base substrate with parallel trenchesSILTRON INC·Filed 2007·Granted Mar 29, 2011·0 cites·13 claims
- 2755US2009142991A1Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting MethodSILTRON INC·Filed 2008·Application pending·0 cites
- 2855US2009149118A1Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting MethodSILTRON INC·Filed 2008·Application pending·0 cites
- 2954US2009148982A1Method of Manufacturing Compound Semiconductor DevicesSILTRON INC·Filed 2009·Application pending·0 cites
- 3051US7427325B2Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made therebySILTRON INC·Filed 2006·Granted Sep 23, 2008·0 cites·7 claims
- 3151US2009183670A1Apparatus for manufacturing high-quality semiconductor single crystal ingot and method using the sameSILTRON INC·Filed 2009·Application pending·0 cites
- 3249US7431028B2Apparatus and method for slicing an ingotSILTRON INC·Filed 2007·Granted Oct 7, 2008·0 cites·7 claims
- 3349US7370646B2Apparatus and method for slicing an ingotSILTRON INC·Filed 2007·Granted May 13, 2008·0 cites·5 claims
- 3449US2011246697A1Single-host multi-workstation computer system, its equipment configuration method and workstation cardSILTRON INC·Filed 2009·Application pending·0 cites
- 3548US2008031720A1Apparatus and method for supplying solid raw material to single crystal growerSILTRON INC·Filed 2007·Application pending·0 cites
- 3647US2008156430A1Apparatus and method for mounting silicon ingot to mounterSILTRON INC·Filed 2007·Application pending·0 cites
- 3747US2008206992A1Method for manufacturing high flatness silicon waferSILTRON INC·Filed 2007·Application pending·0 cites
- 3845US2007141958A1Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting MethodSILTRON INC·Filed 2006·Application pending·0 cites
- 3944US7767596B2Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the sameSILTRON INC·Filed 2007·Granted Aug 3, 2010·0 cites·10 claims
- 4043US2007169688A1Method for manufacturing silicon waferSILTRON INC·Filed 2007·Application pending·0 cites
- 4142US7229495B2Silicon wafer and method for producing silicon single crystalSILTRON INC·Filed 2003·Granted Jun 12, 2007·0 cites·31 claims
- 4241US2008107582A1Method for manufacturing semiconductor single crystal by Czochralski technology, and single crystal ingot and wafer manufactured using the sameSILTRON INC·Filed 2007·Application pending·0 cites
- 4340US6743472B2Coating material for absorbing radiant heat, manufacturing method thereofSILTRON INC·Filed 2002·Granted Jun 1, 2004·1 cites·6 claims
- 4438US2008202551A1Method for cleaning solar cell substratesSILTRON INC·Filed 2007·Application pending·0 cites
- 4537US2009095321A1Method for cleaning silicon waferSILTRON INC·Filed 2008·Application pending·0 cites
- 4636US2008156349A1Method for cleaning silicon waferSILTRON INC·Filed 2007·Application pending·0 cites
- 4736US2005247259A1Silicon wafer and method for manufacturing the sameSILTRON INC·Filed 2004·Application pending·0 cites
- 4834US7906408B2Method of manufacturing strained silicon on-insulator substrateSILTRON INC·Filed 2008·Granted Mar 15, 2011·0 cites·13 claims
- 4933US7901132B2Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatmentSILTRON INC·Filed 2007·Granted Mar 8, 2011·0 cites·14 claims
- 5030US7976642B2Box cleaner for cleaning wafer shipping boxSILTRON INC·Filed 2008·Granted Jul 12, 2011·0 cites·6 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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