Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot

Abstract

The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

1 . A silicon wafer produced from a silicon single crystal grown by the Czochralski method, wherein a self-interstitial dominant defect-free region and a vacancy dominant defect-free region are distributed in a wafer plane, substantially asymmetrically about the center of the wafer. 
   
   
       2 . The silicon wafer according to  claim 1 , wherein interstitial oxygen concentration is under 9.5 ppma. 
   
   
       3 . The silicon wafer according to  claim 1 , wherein interstitial oxygen concentration is from 9.5 ppma to 11.5 ppma. 
   
   
       4 . The silicon wafer according to  claim 1 , wherein interstitial oxygen concentration is from 11.5 ppma to 14 ppma. 
   
   
       5 . A silicon single crystal ingot grown by the Czochralski method, wherein a self-interstitial dominant defect-free region is located in a central portion of the silicon single crystal ingot. 
   
   
       6 . The silicon single crystal ingot according to  claim 5 , wherein the self-interstitial dominant defect-free region is surrounded by a first vacancy dominant defect-free region. 
   
   
       7 . The silicon single crystal ingot according to  claim 6 , wherein the self-interstitial dominant defect-free region surrounds a second vacancy dominant defect-free region. 
   
   
       8 . The silicon single crystal ingot according to  claim 6 , wherein the self-interstitial dominant defect-free region and the first vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the central axis of the above ingot. 
   
   
       9 . The silicon single crystal ingot according to  claim 7 , wherein the self-interstitial dominant defect-free region and the first vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the center of the wafer plane. 
   
   
       10 . A silicon wafer produced from a silicon single crystal grown by the Czochralski method, wherein a self-interstitial dominant defect-free region is located in a central portion of a wafer plane. 
   
   
       11 . The silicon wafer according to  claim 10 , wherein the self-interstitial dominant defect-free region is surrounded by a first vacancy dominant defect-free region. 
   
   
       12 . The silicon wafer according to  claim 11 , wherein the self-interstitial dominant defect-free region surrounds a second vacancy dominant defect-free region. 
   
   
       13 . The silicon wafer according to  claim 11 , wherein the self-interstitial dominant defect-free region and the first vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the center of the wafer plane. 
   
   
       14 . The silicon wafer according to  claim 13 , wherein the self-interstitial dominant defect-free region and the second vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the center of the wafer plane. 
   
   
       15 . The silicon single crystal ingot according to  claim 5 , wherein the self-interstitial dominant defect-free region surrounds a second vacancy dominant defect-free region. 
   
   
       16 . The silicon single crystal ingot according to  claim 5 , wherein the self-interstitial dominant defect-free region and the first vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the central axis of the above ingot. 
   
   
       17 . The silicon wafer according to  claim 10 , wherein the self-interstitial dominant defect-free region surrounds a second vacancy dominant defect-free region. 
   
   
       18 . The silicon wafer according to  claim 10 , wherein the self-interstitial dominant defect-free region and the first vacancy dominant defect-free region are distributed in a wafer plane, asymmetrically about the center of the wafer plane.