Inventor · disambiguated record
Hyon-Jong Cho
Also filed as: CHO HYON-JONG
17 granted patents·7 pending applications·80 citations·filing 2000–2011
92Inventor score
Top patents by PatentIndex Score
24 records- 0191US7559988B2Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingotSILTRON INC·Filed 2006·Granted Jul 14, 2009·9 cites·11 claims
- 0288US7416603B2High quality single crystal and method of growing the sameSILTRON INC·Filed 2005·Granted Aug 26, 2008·6 cites·11 claims
- 0385US7371283B2Method and apparatus of growing silicon single crystal and silicon wafer fabricated therebySILTRON INC·Filed 2005·Granted May 13, 2008·4 cites·6 claims
- 0484US6527859B2Apparatus for growing a single crystalline ingotSILTRON INC·Filed 2001·Granted Mar 4, 2003·24 cites·26 claims
- 0582US7608145B2Method and apparatus of growing silicon single crystal and silicon wafer fabricated therebySILTRON INC·Filed 2007·Granted Oct 27, 2009·3 cites·15 claims
- 0672US7799130B2Silicon single crystal ingot and wafer, growing apparatus and method thereofSILTRON INC·Filed 2006·Granted Sep 21, 2010·2 cites·13 claims
- 0772US7326292B2Quality evaluation method for single crystal ingotSILTRON INC·Filed 2006·Granted Feb 5, 2008·5 cites·11 claims
- 0869US8216372B2Apparatus for growing high quality silicon single crystal ingot and growing method using the sameCHO HYON-JONG·Filed 2006·Granted Jul 10, 2012·1 cites·10 claims
- 0968US6521316B2single crystalline silicon wafer, ingot, and producing method thereofSILTRON INC·Filed 2000·Granted Feb 18, 2003·11 cites·16 claims
- 1065US8574362B2Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingotHONG YOUNG-HO·Filed 2008·Granted Nov 5, 2013·2 cites·3 claims
- 1164US7378071B2Silicon wafer and method for producing silicon single crystalSILTRON INC·Filed 2005·Granted May 27, 2008·1 cites·6 claims
- 1264US6574264B2Apparatus for growing a silicon ingotSILTRON INC·Filed 2001·Granted Jun 3, 2003·5 cites·7 claims
- 1362US8114216B2Semiconductor single crystal growth method having improvement in oxygen concentration characteristicsCHO HYON-JONG·Filed 2008·Granted Feb 14, 2012·2 cites·4 claims
- 1462US2010040525A1Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated TherebySILITRON INC·Filed 2009·Application pending·0 cites
- 1559US2010158781A1Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingotSILTRON INC·Filed 2009·Application pending·0 cites
- 1658US2009272948A1High Quality Single Crystal and Method of Growing the SameSILTRON INC·Filed 2008·Application pending·0 cites
- 1757US6858077B2Single crystalline silicon wafer, ingot, and producing method thereofSILTRON INC·Filed 2002·Granted Feb 22, 2005·5 cites·13 claims
- 1856US8753445B2Apparatus for growing high quality silicon single crystal ingot and growing method using the sameCHO HYON-JONG·Filed 2007·Granted Jun 17, 2014·0 cites·5 claims
- 1951US7427325B2Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made therebySILTRON INC·Filed 2006·Granted Sep 23, 2008·0 cites·7 claims
- 2051US2009183670A1Apparatus for manufacturing high-quality semiconductor single crystal ingot and method using the sameSILTRON INC·Filed 2009·Application pending·0 cites
- 2148US2008031720A1Apparatus and method for supplying solid raw material to single crystal growerSILTRON INC·Filed 2007·Application pending·0 cites
- 2242US7229495B2Silicon wafer and method for producing silicon single crystalSILTRON INC·Filed 2003·Granted Jun 12, 2007·0 cites·31 claims
- 2335US2011197809A1Single crystal cooler and single crystal grower including the sameCHO HYON-JONG·Filed 2011·Application pending·0 cites
- 2434US2002048670A1Single crystalline silicon wafer, ingot and producing method thereofFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →