Assignee

TAIWAN SEMICONDUCTOR MFG COMP

TW·1 granted patent·15 citations·filing 2000–2000

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0166US6511887B1Method for making FET gate oxides with different thicknesses using a thin silicon nitride layer and a single oxidation stepTAIWAN SEMICONDUCTOR MFG COMP·Filed 2000·Granted Jan 28, 2003·15 cites·19 claims

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