Assignee
YANG HAINING S
US·5 granted patents·3 pending applications·8 citations·filing 2006–2012
Top patents by PatentIndex Score
8 records- 0177US8405131B2High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the sameYANG HAINING S·Filed 2008·Granted Mar 26, 2013·6 cites·15 claims
- 0259US9006836B2Method and structure for controlling stress in a transistor channelYANG HAINING S·Filed 2008·Granted Apr 14, 2015·1 cites·17 claims
- 0357US8232150B2Structure and method of forming a transistor with asymmetric channel and source/drain regionsYANG HAINING S·Filed 2009·Granted Jul 31, 2012·1 cites·6 claims
- 0452US8093644B2Multiwalled carbon nanotube memory deviceYANG HAINING S·Filed 2009·Granted Jan 10, 2012·0 cites·20 claims
- 0549US8674444B2Structure and method of forming a transistor with asymmetric channel and source/drain regionsYANG HAINING S·Filed 2012·Granted Mar 18, 2014·0 cites·22 claims
- 0647US2007275522A1Method to enhance cmos transistor performance by inducing strain in the gate and channelYANG HAINING S·Filed 2007·Application pending·0 cites
- 0746US2006118829A1Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact patternYANG HAINING S·Filed 2006·Application pending·0 cites
- 0843US2008268634A1Dopant diffusion barrier layer to prevent out diffusionYANG HAINING S·Filed 2007·Application pending·0 cites
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