Assignee
YANG JI-YI
TW·1 granted patent·1 pending application·6 citations·filing 2006–2006
Top patents by PatentIndex Score
2 records- 0174US8673736B2Method of forming SOI-like structure in a bulk semiconductor substrate by annealing a lower portion of a trench while protecting an upper portion of the trenchYANG JI-YI·Filed 2006·Granted Mar 18, 2014·6 cites·12 claims
- 0245US2007063282A1SOI-like structures in a bulk semiconductor substrateYANG JI-YI·Filed 2006·Application pending·0 cites
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