P

Inventor

JUNG TAE-SUNG

KR37 patents
⚠️ This page may combine multiple inventors who share the name “JUNG TAE-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US5621684AApr 15, 1997

Nonvolatile semiconductor member with different pass potential applied to the first two adjacent word

SAMSUNG ELECTRONICS CO LTD157 citations99
US7161913B2Jan 9, 2007

Packet transmission method for mobile internet

SAMSUNG ELECTRONICS CO LTD62 citations98
US6980802B2Dec 27, 2005

Handover method for mobile station having mobile IP address in mobile communication system

SAMSUNG ELECTRONICS CO LTD73 citations98
US6044017AMar 28, 2000

Flash memory device

SAMSUNG ELECTRONICS CO LTD139 citations98
US5677873AOct 14, 1997

Methods of programming flash EEPROM integrated circuit memory devices to prevent inadvertent programming of nondesignated NAND memory cells therein

SAMSUNG ELECTRONICS CO LTD200 citations98
US6477110B2Nov 5, 2002

Semiconductor memory device having different data rates in read operation and write operation

SAMSUNG ELECTRONICS CO LTD46 citations96
US5732018AMar 24, 1998

Self-contained reprogramming nonvolatile integrated circuit memory devices and methods

SAMSUNG ELECTRONICS CO LTD94 citations96
US5963475AOct 5, 1999

Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein

SAMSUNG ELECTRONICS CO LTD61 citations94
US6603686B2Aug 5, 2003

Semiconductor memory device having different data rates in read operation and write operation

SAMSUNG ELECTRONICS CO LTD38 citations93
US6040735AMar 21, 2000

Reference voltage generators including first and second transistors of same conductivity type

SAMSUNG ELECTRONICS CO LTD22 citations93
US5796273AAug 18, 1998

Sense amplifier for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD26 citations93
US7512687B2Mar 31, 2009

System and method for assigning a mobile IP to a mobile node

SAMSUNG ELECTRONICS CO LTD20 citations92
US6442057B1Aug 27, 2002

Memory module for preventing skew between bus lines

SAMSUNG ELECTRONICS CO LTD25 citations92
US5761123AJun 2, 1998

Sense amplifier circuit of a nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD33 citations92
US4964084AOct 16, 1990

Static random access memory device with voltage control circuit

SAMSUNG ELECTRONICS CO LTD37 citations92
US5737258AApr 7, 1998

Nonvolatile semiconductor memory which is connectable to a DRAM bus

SAMSUNG ELECTRONICS CO LTD44 citations91
US7802054B2Sep 21, 2010

Apparatus and methods using invalidity indicators for buffered memory

SAMSUNG ELECTRONICS CO LTD17 citations90
US9965033B2May 8, 2018

User input method and portable device

SAMSUNG ELECTRONICS CO LTD17 citations86
US7246250B2Jul 17, 2007

Memory device controls delay time of data input buffer in response to delay control information based on a position of a memory device received from memory controller

SAMSUNG ELECTRONICS CO LTD13 citations84
US6275100B1Aug 14, 2001

Reference voltage generators including first and second transistors of same conductivity type and at least one switch

SAMSUNG ELECTRONICS CO LTD18 citations84
US6012122AJan 4, 2000

Systems and methods for distinguishing between memory types

SAMSUNG ELECTRONICS CO LTD18 citations83
US7299030B2Nov 20, 2007

System and method of charging for user traffic except signaling a wireless communication system

SAMSUNG ELECTRONICS CO LTD7 citations74
US6585525B2Jul 1, 2003

Memory modules having conductors at edges thereof and configured to conduct signals to or from the memory modules via the respective edges

SAMSUNG ELECTRONICS CO LTD10 citations74
US5771192AJun 23, 1998

Bit line reference circuit for a nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD14 citations74
US10012493B2Jul 3, 2018

Device and method for detecting position of object

SAMSUNG ELECTRONICS CO LTD2 citations73
US10318832B2Jun 11, 2019

Method and apparatus for authenticating user using vein pattern

SAMSUNG ELECTRONICS CO LTD3 citations72
US4890051ADec 26, 1989

CMOS input buffer stable for the variation of a power supplying voltage

SAMSUNG ELECTRONICS CO LTD12 citations68
US7334137B2Feb 19, 2008

Memory interface systems that couple a memory to a memory controller and are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller

SAMSUNG ELECTRONICS CO LTD2 citations62
USRE36490EJan 11, 2000

Power and signal line bussing method for memory devices

SAMSUNG ELECTRONICS CO LTD2 citations62
US8051258B2Nov 1, 2011

Apparatus and methods using invalidity indicators for buffered memory

SAMSUNG ELECTRONICS CO LTD2 citations60
US10657400B2May 19, 2020

Method and apparatus with vein pattern authentication

SAMSUNG ELECTRONICS CO LTD0 citations51

SAMSUNG SEMICONDUCTOR

1 patent

KOREA ENERGY RESEARCH INST

1 patent

KOREA INST ENERGY RES

1 patent

EARWYNTECH

1 patent

SAMSUNG DISPLAY CO LTD

1 patent

LEE JUN-WOO

1 patent