Inventor
JUNG TAE-SUNG
KR37 patents
⚠️ This page may combine multiple inventors who share the name “JUNG TAE-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS5621684AApr 15, 1997
Nonvolatile semiconductor member with different pass potential applied to the first two adjacent word
SAMSUNG ELECTRONICS CO LTD157 citations99
US7161913B2Jan 9, 2007
Packet transmission method for mobile internet
SAMSUNG ELECTRONICS CO LTD62 citations98
US6980802B2Dec 27, 2005
Handover method for mobile station having mobile IP address in mobile communication system
SAMSUNG ELECTRONICS CO LTD73 citations98
US6044017AMar 28, 2000
Flash memory device
SAMSUNG ELECTRONICS CO LTD139 citations98
US5677873AOct 14, 1997
Methods of programming flash EEPROM integrated circuit memory devices to prevent inadvertent programming of nondesignated NAND memory cells therein
SAMSUNG ELECTRONICS CO LTD200 citations98
US6477110B2Nov 5, 2002
Semiconductor memory device having different data rates in read operation and write operation
SAMSUNG ELECTRONICS CO LTD46 citations96
US5732018AMar 24, 1998
Self-contained reprogramming nonvolatile integrated circuit memory devices and methods
SAMSUNG ELECTRONICS CO LTD94 citations96
US5963475AOct 5, 1999
Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein
SAMSUNG ELECTRONICS CO LTD61 citations94
US6603686B2Aug 5, 2003
Semiconductor memory device having different data rates in read operation and write operation
SAMSUNG ELECTRONICS CO LTD38 citations93
US6040735AMar 21, 2000
Reference voltage generators including first and second transistors of same conductivity type
SAMSUNG ELECTRONICS CO LTD22 citations93
US5796273AAug 18, 1998
Sense amplifier for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD26 citations93
US7512687B2Mar 31, 2009
System and method for assigning a mobile IP to a mobile node
SAMSUNG ELECTRONICS CO LTD20 citations92
US6442057B1Aug 27, 2002
Memory module for preventing skew between bus lines
SAMSUNG ELECTRONICS CO LTD25 citations92
US5761123AJun 2, 1998
Sense amplifier circuit of a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD33 citations92
US4964084AOct 16, 1990
Static random access memory device with voltage control circuit
SAMSUNG ELECTRONICS CO LTD37 citations92
US5737258AApr 7, 1998
Nonvolatile semiconductor memory which is connectable to a DRAM bus
SAMSUNG ELECTRONICS CO LTD44 citations91
US7802054B2Sep 21, 2010
Apparatus and methods using invalidity indicators for buffered memory
SAMSUNG ELECTRONICS CO LTD17 citations90
US9965033B2May 8, 2018
User input method and portable device
SAMSUNG ELECTRONICS CO LTD17 citations86
US7246250B2Jul 17, 2007
Memory device controls delay time of data input buffer in response to delay control information based on a position of a memory device received from memory controller
SAMSUNG ELECTRONICS CO LTD13 citations84
US6275100B1Aug 14, 2001
Reference voltage generators including first and second transistors of same conductivity type and at least one switch
SAMSUNG ELECTRONICS CO LTD18 citations84
US6012122AJan 4, 2000
Systems and methods for distinguishing between memory types
SAMSUNG ELECTRONICS CO LTD18 citations83
US7299030B2Nov 20, 2007
System and method of charging for user traffic except signaling a wireless communication system
SAMSUNG ELECTRONICS CO LTD7 citations74
US6585525B2Jul 1, 2003
Memory modules having conductors at edges thereof and configured to conduct signals to or from the memory modules via the respective edges
SAMSUNG ELECTRONICS CO LTD10 citations74
US5771192AJun 23, 1998
Bit line reference circuit for a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations74
US10012493B2Jul 3, 2018
Device and method for detecting position of object
SAMSUNG ELECTRONICS CO LTD2 citations73
US10318832B2Jun 11, 2019
Method and apparatus for authenticating user using vein pattern
SAMSUNG ELECTRONICS CO LTD3 citations72
US4890051ADec 26, 1989
CMOS input buffer stable for the variation of a power supplying voltage
SAMSUNG ELECTRONICS CO LTD12 citations68
US7334137B2Feb 19, 2008
Memory interface systems that couple a memory to a memory controller and are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller
SAMSUNG ELECTRONICS CO LTD2 citations62
USRE36490EJan 11, 2000
Power and signal line bussing method for memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US8051258B2Nov 1, 2011
Apparatus and methods using invalidity indicators for buffered memory
SAMSUNG ELECTRONICS CO LTD2 citations60
US10657400B2May 19, 2020
Method and apparatus with vein pattern authentication
SAMSUNG ELECTRONICS CO LTD0 citations51