Inventor

AMANO FUMITAKA

JP27 patents

⚠️ This page may combine multiple inventors who share the name “AMANO FUMITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AMANO FUMITAKA

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Three dimensional memory device containing multilayer wordline barrier films and method of making thereof

Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof

Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof

Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof

Selective tungsten growth for word lines of a three-dimensional memory device

Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Semiconductor device containing tubular liner spacer for lateral confinement of self-aligned silicide portions and methods of forming the same

Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same

Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the same

Bonded assembly including interconnect-level bonding pads and methods of forming the same

Multi-layer barrier for CMOS under array type memory device and method of making thereof

Bonded assembly containing bonding pads with metal oxide barriers and methods for forming the same

High aspect ratio via fill process employing selective metal deposition and structures formed by the same

High aspect ratio via fill process employing selective metal deposition and structures formed by the same

High aspect ratio via fill process employing selective metal deposition and structures formed by the same

Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the same

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Three-dimensional memory device including aluminum alloy word lines and method of making the same

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Thermal metal chemical vapor deposition process

TOKYO ELECTRON LTD

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

Film forming method and substrate processing apparatus

Substrate processing method

SANDISK TECHNOLOGIES INC

High aspect ratio via fill process employing selective metal deposition and structures formed by the same