Inventor
CHANG KAI-TAI
TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHANG KAI-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS11756921B2Sep 12, 2023
System and method for bonding semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11848365B2Dec 19, 2023
Semiconductor device structure with source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11355605B2Jun 7, 2022
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11335604B2May 17, 2022
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11239365B2Feb 1, 2022
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11038036B2Jun 15, 2021
Separate epitaxy layers for nanowire stack GAA device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10573751B2Feb 25, 2020
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9917192B2Mar 13, 2018
Structure and method for transistors with line end extension
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9673328B2Jun 6, 2017
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12453290B2Oct 21, 2025
Memory cell, memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439836B2Oct 7, 2025
Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431461B2Sep 30, 2025
System and method for bonding semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356667B2Jul 8, 2025
Separate epitaxy layers for nanowire stack GAA device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324364B2Jun 3, 2025
Memory device and operating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243930B2Mar 4, 2025
Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11849655B2Dec 19, 2023
Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11785870B2Oct 10, 2023
Memory cell, semiconductor device including memory cell, and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742405B2Aug 29, 2023
Separate epitaxy layers for nanowire stack GAA device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605562B2Mar 14, 2023
Semiconductor device with fin end spacer and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444174B2Sep 13, 2022
Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114303B2Sep 7, 2021
Gate all around device, method for manufacturing FinFET device, and method for manufacturing gate all around device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10886180B2Jan 5, 2021
Semiconductor device with fin end spacer and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10797174B2Oct 6, 2020
Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62