P

Inventor

CHANG KAI-TAI

TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHANG KAI-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US11756921B2Sep 12, 2023

System and method for bonding semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11848365B2Dec 19, 2023

Semiconductor device structure with source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11355605B2Jun 7, 2022

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11335604B2May 17, 2022

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11239365B2Feb 1, 2022

Structure and method for providing line end extensions for fin-type active regions

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11038036B2Jun 15, 2021

Separate epitaxy layers for nanowire stack GAA device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10573751B2Feb 25, 2020

Structure and method for providing line end extensions for fin-type active regions

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9917192B2Mar 13, 2018

Structure and method for transistors with line end extension

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9673328B2Jun 6, 2017

Structure and method for providing line end extensions for fin-type active regions

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12453290B2Oct 21, 2025

Memory cell, memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439836B2Oct 7, 2025

Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431461B2Sep 30, 2025

System and method for bonding semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356667B2Jul 8, 2025

Separate epitaxy layers for nanowire stack GAA device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324364B2Jun 3, 2025

Memory device and operating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243930B2Mar 4, 2025

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11849655B2Dec 19, 2023

Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11785870B2Oct 10, 2023

Memory cell, semiconductor device including memory cell, and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742405B2Aug 29, 2023

Separate epitaxy layers for nanowire stack GAA device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605562B2Mar 14, 2023

Semiconductor device with fin end spacer and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444174B2Sep 13, 2022

Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114303B2Sep 7, 2021

Gate all around device, method for manufacturing FinFET device, and method for manufacturing gate all around device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10886180B2Jan 5, 2021

Semiconductor device with fin end spacer and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10797174B2Oct 6, 2020

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

TAIWAN SEMICONDUCTOR MFG

2 patents

YU SHAO-MING

1 patent

CHANG KAI-TAI

1 patent

MOSAID TECH INCORPORATED

1 patent

MOSAID TECHNOLOGIES INC

1 patent