Inventor
KIM YOUN CHEUL
US29 patents
⚠️ This page may combine multiple inventors who share the name “KIM YOUN CHEUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS7633785B2Dec 15, 2009
Semiconductor memory device and method of generating chip enable signal thereof
SAMSUNG ELECTRONICS CO LTD21 citations92
US7116149B2Oct 3, 2006
Duty cycle correction circuit of delay locked loop and the delay locked loop having the duty cycle correction circuit
SAMSUNG ELECTRONICS CO LTD22 citations92
US7675791B2Mar 9, 2010
Synchronous memory device
SAMSUNG ELECTRONICS CO LTD12 citations84
US7433263B2Oct 7, 2008
Multi-port semiconductor device and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US6707321B2Mar 16, 2004
Input receiver for controlling offset voltage using output feedback signal
SAMSUNG ELECTRONICS CO LTD18 citations81
US7369453B2May 6, 2008
Multi-port memory device and method of controlling the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7202720B2Apr 10, 2007
Delay locked loop having a duty cycle correction circuit
SAMSUNG ELECTRONICS CO LTD6 citations74
US7246280B2Jul 17, 2007
Memory module with parallel testing
SAMSUNG ELECTRONICS CO LTD8 citations72
US7554878B2Jun 30, 2009
Synchronous memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7106612B2Sep 12, 2006
Semiconductor memory device using tapered arrangement of local input and output sense amplifiers
SAMSUNG ELECTRONICS CO LTD6 citations63
US8046665B2Oct 25, 2011
Memory device employing dual clocking for generating systematic code and method thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US7266662B2Sep 4, 2007
Input/output data pipeline circuit of semiconductor memory device and the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7441167B2Oct 21, 2008
Memory module with parallel testing
SAMSUNG ELECTRONICS CO LTD0 citations51
SUNRISE MEMORY CORP
5 patentsUS11580038B2Feb 14, 2023
Quasi-volatile system-level memory
SUNRISE MEMORY CORP21 citations93
US11675500B2Jun 13, 2023
High capacity memory circuit with low effective latency
SUNRISE MEMORY CORP7 citations85
US12073082B2Aug 27, 2024
High capacity memory circuit with low effective latency
SUNRISE MEMORY CORP4 citations74
US12411606B2Sep 9, 2025
High capacity memory circuit with low effective latency
SUNRISE MEMORY CORP0 citations62
US12105650B2Oct 1, 2024
Quasi-volatile system-level memory
SUNRISE MEMORY CORP0 citations61
YANGTZE MEMORY TECH CO LTD
5 patentsUS11088166B2Aug 10, 2021
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD7 citations83
US10679721B2Jun 9, 2020
Structure and method for testing three-dimensional memory device
YANGTZE MEMORY TECH CO LTD9 citations83
US10998079B2May 4, 2021
Structure and method for testing three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations72
US11616077B2Mar 28, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11563029B2Jan 24, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
SK HYNIX INC
4 patentsUS9257196B2Feb 9, 2016
Semiconductor devices including E-fuse arrays
SK HYNIX INC7 citations84
US9142282B2Sep 22, 2015
Power supply scheme for small swing data line and method of operating the same
SK HYNIX INC2 citations63
US9142283B2Sep 22, 2015
Circuit for small swing data line and method of operating the same
SK HYNIX INC0 citations52
US8742809B2Jun 3, 2014
Delay-locked loop having a loop bandwidth dependency on phase error
SK HYNIX INC0 citations52