Inventor
FUKUDA TSUGUO
JP39 patents
⚠️ This page may combine multiple inventors who share the name “FUKUDA TSUGUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NGK INSULATORS LTD
9 patentsUS6074477AJun 13, 2000
Process and an apparatus for producing a composite oxide single crystal body
NGK INSULATORS LTD20 citations92
US6180872B1Jan 30, 2001
Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member
NGK INSULATORS LTD5 citations74
US6072118AJun 6, 2000
Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member
NGK INSULATORS LTD5 citations74
US5985022ANov 16, 1999
Optoelectric articles and a process for producing the same
NGK INSULATORS LTD8 citations74
US5919304AJul 6, 1999
Method and apparatus for producing oxide series single crystals
NGK INSULATORS LTD12 citations74
US5650006AJul 22, 1997
Process for producing a lithium niobate-lithium tantalate single crystal substrate
NGK INSULATORS LTD9 citations74
US5539569AJul 23, 1996
Optoelectric articles and a process for producing the same
NGK INSULATORS LTD9 citations74
US5517942AMay 21, 1996
Process for producing optoelectric articles
NGK INSULATORS LTD7 citations73
US5643688AJul 1, 1997
Optoelectric articles and a process for producing the same
NGK INSULATORS LTD1 citations52
TOKYO SHIBAURA ELECTRIC CO
8 patentsUS4022652AMay 10, 1977
Method of growing multiple monocrystalline layers
TOKYO SHIBAURA ELECTRIC CO42 citations93
US4144117AMar 13, 1979
Method for producing a lithium tantalate single crystal
TOKYO SHIBAURA ELECTRIC CO20 citations82
US4539067ASep 3, 1985
Method and apparatus for manufacturing single crystals
TOKYO SHIBAURA ELECTRIC CO19 citations81
US4371419AFeb 1, 1983
Method for producing a lithium tantalate single crystal
TOKYO SHIBAURA ELECTRIC CO12 citations74
US4135963AJan 23, 1979
Lithium tantalate single crystal growth from a platinum-rhodium crucible in an inert gas, nitrogen or reducing gas atmosphere
TOKYO SHIBAURA ELECTRIC CO8 citations74
US4397813AAug 9, 1983
Apparatus for manufacturing single crystals
TOKYO SHIBAURA ELECTRIC CO9 citations72
US4431476AFeb 14, 1984
Method for manufacturing gallium phosphide single crystals
TOKYO SHIBAURA ELECTRIC CO5 citations62
US4154025AMay 15, 1979
Method for preparing oxide piezoelectric material wafers
TOKYO SHIBAURA ELECTRIC CO1 citations52
AGENCY IND SCIENCE TECHN
4 patentsUS4637854AJan 20, 1987
Method for producing GaAs single crystal
AGENCY IND SCIENCE TECHN12 citations74
US4606037AAug 12, 1986
Apparatus for manufacturing semiconductor single crystal
AGENCY IND SCIENCE TECHN14 citations74
US4496424AJan 29, 1985
Method for manufacture of III-V compound semiconducting single crystal
AGENCY IND SCIENCE TECHN11 citations74
US4586979AMay 6, 1986
Method for manufacture of III-V group compound semiconductor single crystal
AGENCY IND SCIENCE TECHN16 citations70
STELLA CHEMIFA CORP
3 patentsUS7608828B2Oct 27, 2009
Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device
STELLA CHEMIFA CORP16 citations82
US7413606B2Aug 19, 2008
Method for producing crystal of fluoride
STELLA CHEMIFA CORP4 citations61
US7498579B2Mar 3, 2009
Scintillator and radiation detector, and radiation inspecting device
STELLA CHEMIFA CORP0 citations46
MITSUBISHI GAS CHEMICAL CO
2 patentsUS5866092AFeb 2, 1999
Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof
MITSUBISHI GAS CHEMICAL CO11 citations74
US6030449AFeb 29, 2000
Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof
MITSUBISHI GAS CHEMICAL CO5 citations63