Apparatus for manufacturing semiconductor single crystal

Abstract

The heater member of a furnace for heating the crucible used for fusing raw materials for a semiconductor single crystal is provided with reinforcing members made of a material such as alumina or pyrolytic boron nitride which excels in electric insulating property, resistance to heat, and strength. When a magnetic field with an alternating current or pulsating current of electricity is applied to the site of single crystal growth for the purpose of stabilizing the growth of the single crystal, the furnace tends to sustain breakage. These reinforcing members thus used on the heater member impart improved durability to the furnace and enable the apparatus as a whole to enjoy a long service life.

What is claimed is: 
     
       1. An apparatus for the manufacture of a semiconductor single crystal, comprising a furnace possessing a heater member adapted to heat a crucible for fusing raw materials for the crystal, insulative thermally resistant reinforcing members for reinforcing said heater member of said furnace, and a magnetic field applying device formed of at least one magnet means opposed across a space to the lateral side of said furnace. 
     
     
       2. An apparatus according to claim 1, wherein said reinforcing members comprise an annular member of a cross section substantially of the shape of the letter "U" to be fitted to the upper end of said heater member, an annular member of a cross section substantially of the shape of the letter "L" to be fitted to the lower peripheral side of said heater member, and an annular member to be fitted to the lower inner side of said heater member. 
     
     
       3. An apparatus according to claim 1, wherein said reinforcing members are made of alumina. 
     
     
       4. An apparatus according to claim 2, wherein said component reinforcing members are made of alumina. 
     
     
       5. An apparatus according to claim 1, wherein said reinforcing members are made of pyrolytic boron nitride. 
     
     
       6. An apparatus according to claim 2, wherein said component reinforcing members are made of pyrolytic boron nitride. 
     
     
       7. An apparatus according to claim 1, wherein said magnetic field applying device is further provided with means for selectively moving said magnetic field applying device to a position for application of magnetic field to said furnace and to a position not for application of magnetic field. 
     
     
       8. An apparatus according to claim 1, wherein said magnetic field applying device is formed of a pair of magnet means which are supported on support bases provided at the lower ends thereof with wheels and are interconnected with a cross bar. 
     
     
       9. An apparatus according to claim 8, wherein the support bases for said magnet means are provided on the bottom sides thereof with wheels. 
     
     
       10. An apparatus according to claim 1, wherein said magnet field applying device has an annular shape and is disposed in a manner encircling said furnace and is provided with means for moving said annular device in a vertical direction.