Inventor · disambiguated record
Kazutaka Terashima
Also filed as: TERASHIMA KAZUTAKA
26 granted patents·2 pending applications·442 citations·filing 1983–2015
96Inventor score
Files withTOSHIBA KK6JAPAN RES DEV CORP5AGENCY IND SCIENCE TECHN4KOMATSU DENSHI KINZOKU KK2NITTO OPTICAL CO LTD2
Top patents by PatentIndex Score
28 records- 0192US6069021AMethod of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 1999·Granted May 30, 2000·189 cites·10 claims
- 0281US6194744B1Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layerSHOWA DENKO KK·Filed 2000·Granted Feb 27, 2001·30 cites·6 claims
- 0369US4606037AApparatus for manufacturing semiconductor single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted Aug 12, 1986·14 cites·10 claims
- 0467US4586979AMethod for manufacture of III-V group compound semiconductor single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted May 6, 1986·16 cites·6 claims
- 0562US4960721AMethod for purifying group II-IV compound semiconductorsTOSHIBA KK·Filed 1988·Granted Oct 2, 1990·19 cites·22 claims
- 0661US6004393ADetecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystalKOMATSU DENSHI KINZOKU KK·Filed 1999·Granted Dec 21, 1999·20 cites·2 claims
- 0761US4496424AMethod for manufacture of III-V compound semiconducting single crystalAGENCY IND SCIENCE TECHN·Filed 1983·Granted Jan 29, 1985·11 cites·3 claims
- 0860US5113469AOptical wavelength-converting device for guided-wave second-harmonic generation in cerenkov radiation modeTOSHIBA KK·Filed 1991·Granted May 12, 1992·23 cites·15 claims
- 0959US6828169B2Method of forming group-III nitride semiconductor layer on a light-emitting deviceVETRA TECHNOLOGY INC·Filed 2003·Granted Dec 7, 2004·7 cites·20 claims
- 1058US7696690B2Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystalsJAPAN SCIENCE AND TECHNOLGOY A·Filed 2005·Granted Apr 13, 2010·2 cites·18 claims
- 1158US5524574AControl of oxygen concentration in single crystal pulled up from melt containing Group-V elementJAPAN RES DEV CORP·Filed 1994·Granted Jun 11, 1996·14 cites·5 claims
- 1256US5030315AMethods of manufacturing compound semiconductor crystals and apparatus for the sameTOSHIBA KK·Filed 1986·Granted Jul 9, 1991·12 cites·12 claims
- 1355US5477805APreparation of silicon melt for use in pull method of manufacturing single crystalJAPAN RES DEV CORP·Filed 1994·Granted Dec 26, 1995·12 cites·5 claims
- 1454US6019837ADetecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystalKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Feb 1, 2000·11 cites·9 claims
- 1553US7875118B2Crystallization method and crystallization apparatusCANON KK·Filed 2007·Granted Jan 25, 2011·1 cites·2 claims
- 1652US5450814ASingle crystal pulling apparatus having slidable shield plate to control area of opening around single crystalJAPAN RES DEV CORP·Filed 1993·Granted Sep 19, 1995·14 cites·4 claims
- 1752US5377291AWavelength converting optical deviceTOSHIBA KK·Filed 1989·Granted Dec 27, 1994·14 cites·23 claims
- 1852US4637854AMethod for producing GaAs single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted Jan 20, 1987·12 cites·7 claims
- 1946US6936490B2Semiconductor wafer and its manufacturing methodTOSHIBA CERAMICS CO·Filed 2002·Granted Aug 30, 2005·2 cites·24 claims
- 2043US2010297786A1Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the SameNITTO KOKI KABUSHIKI KAISHA·Filed 2007·Application pending·0 cites
- 2141US5162297ALiquid phase epitaxial growth of high temperature superconducting oxide waferTOSHIBA KK·Filed 1988·Granted Nov 10, 1992·8 cites·27 claims
- 2238US2003198301A1Method of epitaxial lateral overgrowthFiled 2003·Application pending·0 cites
- 2337US5476064APull method for growth of single crystal using density detector and apparatus thereforJAPAN RES DEV CORP·Filed 1994·Granted Dec 19, 1995·4 cites·5 claims
- 2435US4816240AMethod of synthesizing Group III element-phosphorus compoundTOSHIBA KK·Filed 1987·Granted Mar 28, 1989·3 cites·1 claims
- 2534US9755111B2Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)NITTO OPTICAL CO LTD·Filed 2015·Granted Sep 5, 2017·0 cites·9 claims
- 2632US5410914AMeasuring device for density of liquid or high-temperature melt without influence of surface tensionJAPAN RES DEV CORP·Filed 1993·Granted May 2, 1995·4 cites·10 claims
- 2731US9595632B2Method for producing GaN-based crystal and semiconductor deviceNITTO OPTICAL CO LTD·Filed 2015·Granted Mar 14, 2017·0 cites·11 claims
- 2830US6096128ASilicon crystal, and device and method for manufacturing sameTOSHIBA CERAMICS CO·Filed 1998·Granted Aug 1, 2000·0 cites·13 claims
Join the waitlist — get patent alerts
Get an alert when Kazutaka Terashima files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →