Inventor · disambiguated record
Jung-Il Cho
Also filed as: CHO JUNG · CHO JUNG IL
9 granted patents·1 pending application·65 citations·filing 1998–2017
84Inventor score
Top patents by PatentIndex Score
10 records- 0185US6319326B1Apparatus for surface modification of polymer, metal and ceramic materials using ion beamKOREA INST SCI & TECH·Filed 1998·Granted Nov 20, 2001·49 cites·8 claims
- 0271US9293360B2Manufacturing method of semiconductor memory device with air gap isolation layersSK HYNIX INC·Filed 2014·Granted Mar 22, 2016·2 cites·15 claims
- 0369US9851898B2Method for changing display range and electronic device thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 26, 2017·1 cites·18 claims
- 0469US6841789B2Apparatus for surface modification of polymer, metal and ceramic materials using ion beamKOREA INST SCI & TECH·Filed 2001·Granted Jan 11, 2005·7 cites·2 claims
- 0568US9594501B2Method for changing display range and electronic device thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 14, 2017·2 cites·14 claims
- 0659US7348240B2Method for forming metal line in flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 25, 2008·2 cites·12 claims
- 0748US2014151779A1Semiconductor memory device and method of manufacturing the sameSK HYNIX INC·Filed 2013·Application pending·0 cites
- 0846US6908805B2Method of manufacturing dual gate oxide filmHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·1 cites·9 claims
- 0943US9954943B2Method for configuring multi-vision and electronic device thereforSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 24, 2018·0 cites·21 claims
- 1041US6780743B2Method of forming a floating gate in a flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 24, 2004·1 cites·5 claims
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