Inventor

KANEKO TADAAKI

JP49 patents

⚠️ This page may combine multiple inventors who share the name “KANEKO TADAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANEKO TADAAKI

KWANSEI GAKUIN EDUCATIONAL FOUND

Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material

Method for producing a SiC substrate via an etching step, growth step, and peeling step

SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer

Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer

SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate

Method for measuring etching amount, and measurement system therefor

SiC epitaxial substrate manufacturing method and manufacturing device therefor

Method for manufacturing SiC substrate

Manufacturing device for SiC semiconductor substrate

Method of using sic container

Method for manufacturing SiC substrate

Method of manufacturing semiconductor substrate and epitaxial growth method

Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate

Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate

Method for manufacturing semiconductor wafer

Evaluation method for silicon carbide substrates

Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer

Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer

Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate

Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes

Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing

Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate

Method for manufacturing silicon-carbide semiconductor element

Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer

Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method

Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing

SiC semiconductor substrate, and, production method therefor and production device therefor

Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method

SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same

Method of manufacturing SiC semiconductor device and SiC semiconductor device

SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof

Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportation

Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrate

Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrate

Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate

Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure

Method for manufacturing silicon-carbide semiconductor element

Surface treatment method for SiC substrate

KANEKO TADAAKI

Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrode

Nanometer standard prototype and method for manufacturing nanometer standard prototype

Semiconductor wafer manufacturing method, and semiconductor wafer

KWANSEI GAKUIN EDUCATIONAL FOU

Method for producing single crystal silicon carbide

Single crystal silicon carbide and method for producing the same

UBE INDUSTRIES

Method of manufacturing diethyl carbonate

JAPAN RES DEV CORP

Method for dry-etching using gaseous bismuth halide compound

TOYO TANSO CO

Etching method for SiC substrate and holding container

RIBER SA

Electron beam microprocessing method

SANO NAOKATSU

Method of mask forming and method of three-dimensional microfabrication

RIBER

Method of three-dimensional microfabrication and high-density three-dimentional fine structure