Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate

Abstract

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

The invention claimed is: 
     
       1. A device for manufacturing a semiconductor substrate comprising:
 a main container that accommodates a semiconductor substrate; 
 a high melting point container; and 
 a heating furnace having a heating chamber that accommodates the main container and the high melting point container, 
 wherein the heating furnace includes a heating source in a direction intersecting with main surface of the semiconductor substrate to be arranged in the heating chamber, 
 wherein the main container is made of a material containing all atomic species constituting the semiconductor substrate, 
 wherein the high melting point container comprising a gaseous species vapor pressure space which accommodates the main container and in which a vapor pressure environment of a gaseous species of an atomic species constituting the semiconductor substrate is formed, 
 wherein an inside of the main container is exhausted through the gaseous species vapor pressure space. 
 
     
     
       2. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source has a heat equalizing range for uniformly heating the main surface of the semiconductor substrate. 
     
     
       3. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source has a heating portion that generates heat, and an area of the heating portion is equal to or larger than an area of the surface of the main container facing the heating source. 
     
     
       4. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source has a heating portion that generates heat, and the heating portion is arranged substantially parallel to the main surface of the semiconductor substrate. 
     
     
       5. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source is arranged at a position facing the main surface. 
     
     
       6. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source includes: a first heating source arranged at a position facing the main surface; and a second heating source at a position facing the first heating source, and the main container is provided at a position sandwiched between the first heating source and the second heating source. 
     
     
       7. The device for manufacturing a semiconductor substrate according to  claim 6 , wherein the first heating source is provided on a top surface side in the heating chamber, and the second heating source is provided on a bottom surface side in the heating chamber. 
     
     
       8. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating furnace can perform heating in a manner to form a temperature gradient in a substantially vertical direction to the semiconductor substrate to be arranged in the heating chamber. 
     
     
       9. The device for manufacturing a semiconductor substrate according to  claim 1 , configured to be used for heating a semiconductor substrate having a diameter or long diameter of 6 inches or above. 
     
     
       10. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein at least a part of the main container is a release and reception body that transports atoms to and from a semiconductor substrate. 
     
     
       11. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the high melting point container includes a vapor supply source capable of supplying vapor pressure of a gaseous species containing an atomic species constituting the semiconductor substrate. 
     
     
       12. The device for manufacturing a semiconductor substrate according to  claim 1 , wherein the heating source has a heating portion that generates heat, and an area of the heating portion is equal to or larger than an area of the surface of the high melting point container facing the heating source.