Inventor · disambiguated record
Tadaaki Kaneko
Also filed as: KANEKO TADAAKI
44 granted patents·14 pending applications·41 citations·filing 1996–2023
96Inventor score
Files withKWANSEI GAKUIN EDUCATIONAL FOUND44KANEKO TADAAKI4KWANSEI GAKUIN EDUCATIONAL FOU2NEW IND RES ORGANIZATION2JAPAN RES DEV CORP1
Top patents by PatentIndex Score
58 records- 0196US12098476B2Method for producing a SiC substrate via an etching step, growth step, and peeling stepKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Sep 24, 2024·5 cites·11 claims
- 0290US11932967B2SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal waferKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Mar 19, 2024·2 cites·14 claims
- 0389US12247319B2Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC materialKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Mar 11, 2025·2 cites·17 claims
- 0487US11359307B2Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2017·Granted Jun 14, 2022·4 cites·12 claims
- 0585US11972949B2SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Apr 30, 2024·2 cites·9 claims
- 0681US12320030B2Method of using sic containerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2023·Granted Jun 3, 2025·0 cites·6 claims
- 0781US9656942B2Method of manufacturing diethyl carbonateUBE INDUSTRIES·Filed 2013·Granted May 23, 2017·4 cites·17 claims
- 0880US7637998B2Method for producing single crystal silicon carbideKWANSEI GAKUIN EDUCATIONAL FOU·Filed 2008·Granted Dec 29, 2009·4 cites·12 claims
- 0974US12325930B2Manufacturing device for SiC semiconductor substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Granted Jun 10, 2025·0 cites·11 claims
- 1069US12460315B2Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Nov 4, 2025·0 cites·19 claims
- 1167US12398038B2Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Aug 26, 2025·0 cites·4 claims
- 1267US10847342B2Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Nov 24, 2020·0 cites·5 claims
- 1366US10508361B2Method for manufacturing semiconductor waferKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2016·Granted Dec 17, 2019·1 cites·11 claims
- 1466US8211244B2Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrodeKANEKO TADAAKI·Filed 2010·Granted Jul 3, 2012·2 cites·7 claims
- 1562US10388536B2Etching method for SiC substrate and holding containerTOYO TANSO CO·Filed 2015·Granted Aug 20, 2019·1 cites·2 claims
- 1662US9978597B2Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressureKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2014·Granted May 22, 2018·1 cites·14 claims
- 1761US2012175639A1Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrodeKANEKO TADAAKI·Filed 2012·Application pending·0 cites
- 1860US11952678B2Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportationKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Apr 9, 2024·0 cites·12 claims
- 1960US7527869B2Single crystal silicon carbide and method for producing the sameKWANSEI GAKUIN EDUCATIONAL FOU·Filed 2001·Granted May 5, 2009·4 cites·4 claims
- 2058US8110322B2Method of mask forming and method of three-dimensional microfabricationSANO NAOKATSU·Filed 2005·Granted Feb 7, 2012·2 cites·15 claims
- 2157US12065758B2Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Aug 20, 2024·0 cites·9 claims
- 2256US11081347B2Method for manufacturing silicon-carbide semiconductor elementKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2018·Granted Aug 3, 2021·0 cites·17 claims
- 2356US10012675B2Nanometer standard prototype and method for manufacturing nanometer standard prototypeKANEKO TADAAKI·Filed 2011·Granted Jul 3, 2018·1 cites·19 claims
- 2455US12509795B2Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Dec 30, 2025·0 cites·18 claims
- 2555US12325936B2Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processingKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Jun 10, 2025·0 cites·3 claims
- 2655US12255073B2Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processingKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Mar 18, 2025·0 cites·8 claims
- 2755US12237378B2Method for manufacturing SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Feb 25, 2025·0 cites·12 claims
- 2854US12362175B2Method for manufacturing SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Jul 15, 2025·0 cites·11 claims
- 2954US10699873B2Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2017·Granted Jun 30, 2020·0 cites·11 claims
- 3054US2024404827A1Method for improving dopant activation rate and structure created by means of said methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 3153US12385158B2Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holesKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Aug 12, 2025·0 cites·9 claims
- 3253US12209328B2Method of manufacturing semiconductor substrate and epitaxial growth methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Jan 28, 2025·0 cites·11 claims
- 3353US12014939B2Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Jun 18, 2024·0 cites·10 claims
- 3453US2025188643A1Method for suppressing formation of stacking fault, structure produced by this method, and method for evaluating affected layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 3553US2024068958A1Method and system for evaluating work-affected layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 3652US12237377B2SiC semiconductor substrate, and, production method therefor and production device thereforKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2019·Granted Feb 25, 2025·0 cites·6 claims
- 3752US9941116B2Method for manufacturing silicon-carbide semiconductor elementKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2014·Granted Apr 10, 2018·0 cites·12 claims
- 3852US2024405076A1Method for achieving uniform carrier concentration in epitaxial layer, and structure created by means of said methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 3952US2025051962A1Method for reducing stacking faults in silicon carbide, and structure created by means of said methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 4052US2022316089A1Method for producing semiconductor substrates and device for producing semiconductor substratesKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Application pending·0 cites
- 4151US12451348B2Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Oct 21, 2025·0 cites·9 claims
- 4251US12421624B2SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereofKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Sep 23, 2025·0 cites·23 claims
- 4351US11955354B2Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Apr 9, 2024·0 cites·12 claims
- 4451US2024241064A1Method for evaluating work-modified layer, and method of manufacturing semiconductor single crystal substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 4550US12131960B2Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Oct 29, 2024·0 cites·23 claims
- 4650US12020928B2SiC semiconductor substrate, method for manufacturing same, and device for manufacturing sameKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2019·Granted Jun 25, 2024·0 cites·30 claims
- 4749US7704861B2Electron beam microprocessing methodRIBER SA·Filed 2004·Granted Apr 27, 2010·4 cites·13 claims
- 4848US10665465B2Surface treatment method for SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2015·Granted May 26, 2020·0 cites·16 claims
- 4948US2024020814A1Heat treatment environment evaluation method and silicon carbide substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Application pending·0 cites
- 5048US2007059501A1Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrodeNEW IND RES ORGANIZATION·Filed 2004·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →