P

Inventor

ECARNOT LUDOVIC

FR24 patents
⚠️ This page may combine multiple inventors who share the name “ECARNOT LUDOVIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SOITEC SILICON ON INSULATOR

21 patents
US6962858B2Nov 8, 2005

Method for reducing free surface roughness of a semiconductor wafer

SOITEC SILICON ON INSULATOR45 citations92
US11282889B2Mar 22, 2022

Substrate for a front-side-type image sensor and method for producing such a substrate

SOITEC SILICON ON INSULATOR2 citations70
US12344524B2Jul 1, 2025

Methods of fabricating semiconductor structures including cavities filled with a sacrificial material

SOITEC SILICON ON INSULATOR0 citations62
US12198975B2Jan 14, 2025

Semiconductor on insulator structure for a front side type imager

SOITEC SILICON ON INSULATOR0 citations62
US11127624B2Sep 21, 2021

Method of manufacturing a semiconductor on insulator type structure, notably for a front side type imager

SOITEC SILICON ON INSULATOR0 citations62
US7892861B2Feb 22, 2011

Method for fabricating a compound-material wafer

SOITEC SILICON ON INSULATOR2 citations62
US7883628B2Feb 8, 2011

Method of reducing the surface roughness of a semiconductor wafer

SOITEC SILICON ON INSULATOR4 citations62
US7749910B2Jul 6, 2010

Method of reducing the surface roughness of a semiconductor wafer

SOITEC SILICON ON INSULATOR2 citations62
US7138344B2Nov 21, 2006

Method for minimizing slip line faults on a semiconductor wafer surface

SOITEC SILICON ON INSULATOR3 citations62
US11876020B2Jan 16, 2024

Method for manufacturing a CFET device

SOITEC SILICON ON INSULATOR1 citations60
US11855120B2Dec 26, 2023

Substrate for a front-side-type image sensor and method for producing such a substrate

SOITEC SILICON ON INSULATOR0 citations60
US11127775B2Sep 21, 2021

Substrate for front side type imager and method of manufacturing such a substrate

SOITEC SILICON ON INSULATOR0 citations60
US11114314B2Sep 7, 2021

Method for fabrication of a semiconductor structure including an interposer free from any through via

SOITEC SILICON ON INSULATOR0 citations57
US10777447B2Sep 15, 2020

Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type

SOITEC SILICON ON INSULATOR1 citations54
US12525483B2Jan 13, 2026

Method for transferring a thin layer onto a support substrate provided with a charge-trapping layer

SOITEC SILICON ON INSULATOR0 citations52
US11205702B2Dec 21, 2021

Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit

SOITEC SILICON ON INSULATOR0 citations52
US10703627B2Jul 7, 2020

Methods of fabricating semiconductor structures including cavities filled with a sacrificial material

SOITEC SILICON ON INSULATOR0 citations51
US12100727B2Sep 24, 2024

Method for manufacturing a substrate for a front-facing image sensor

SOITEC SILICON ON INSULATOR0 citations50
US12148755B2Nov 19, 2024

Front-side-type image sensor

SOITEC SILICON ON INSULATOR0 citations46
US10163682B2Dec 25, 2018

Methods of forming semiconductor structures

SOITEC SILICON ON INSULATOR0 citations42
US9768057B2Sep 19, 2017

Method for transferring a layer from a single-crystal substrate

SOITEC SILICON ON INSULATOR0 citations35

COMMISSARIAT ENERGIE ATOMIQUE

1 patent

SCHWARZENBACH WALTER

1 patent

REYNAUD PATRICK

1 patent