Inventor · disambiguated record
Gordon P. Pollack
Also filed as: POLLACK GORDON · POLLACK GORDON P
17 granted patents·1 pending application·864 citations·filing 1984–2006
95Inventor score
Files withTEXAS INSTRUMENTS INC17
Top patents by PatentIndex Score
18 records- 0197US4956307AThin oxide sidewall insulators for silicon-over-insulator transistorsTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 11, 1990·282 cites·16 claims
- 0293US5185280AMethod of fabricating a soi transistor with pocket implant and body-to-source (bts) contactTEXAS INSTRUMENTS INC·Filed 1991·Granted Feb 9, 1993·117 cites·2 claims
- 0392US5482871AMethod for forming a mesa-isolated SOI transistor having a split-process polysilicon gateTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 9, 1996·107 cites·10 claims
- 0478US4580330AIntegrated circuit isolationTEXAS INSTRUMENTS INC·Filed 1984·Granted Apr 8, 1986·44 cites·9 claims
- 0577US5225697AdRAM cell and methodTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 6, 1993·62 cites·19 claims
- 0674US4541167AMethod for integrated circuit device isolationTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 17, 1985·34 cites·3 claims
- 0773US4797373AMethod of making dRAM cell with trench capacitorTEXAS INSTRUMENTS INC·Filed 1987·Granted Jan 10, 1989·41 cites·5 claims
- 0873US4659426APlasma etching of refractory metals and their silicidesTEXAS INSTRUMENTS INC·Filed 1985·Granted Apr 21, 1987·45 cites·45 claims
- 0970US6847089B2Gate edge diode leakage reductionTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 25, 2005·12 cites·4 claims
- 1067US4538343AChannel stop isolation technology utilizing two-step etching and selective oxidation with sidewall maskingTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 3, 1985·27 cites·13 claims
- 1161US5039621ASemiconductor over insulator mesa and method of forming the sameTEXAS INSTRUMENTS INC·Filed 1990·Granted Aug 13, 1991·27 cites·15 claims
- 1261US4939104AMethod for forming a buried lateral contactTEXAS INSTRUMENTS INC·Filed 1987·Granted Jul 3, 1990·28 cites·6 claims
- 1353US5120675AMethod for forming a trench within a semiconductor layer of materialTEXAS INSTRUMENTS INC·Filed 1990·Granted Jun 9, 1992·24 cites·8 claims
- 1452US7479668B2Source/drain extension implant process for use with short time annealsTEXAS INSTRUMENTS INC·Filed 2006·Granted Jan 20, 2009·0 cites·7 claims
- 1548US7297605B2Source/drain extension implant process for use with short time annealsTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 20, 2007·1 cites·13 claims
- 1640US2004195631A1Gate edge diode leakage reductionFiled 2004·Application pending·0 cites
- 1737US5162882ASemiconductor over insulator mesaTEXAS INSTRUMENTS INC·Filed 1991·Granted Nov 10, 1992·7 cites·11 claims
- 1834US5240512AMethod and structure for forming a trench within a semiconductor layer of materialTEXAS INSTRUMENTS INC·Filed 1992·Granted Aug 31, 1993·6 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →