Inventor
HONG SOO-JIN
KR30 patents
⚠️ This page may combine multiple inventors who share the name “HONG SOO-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
27 patentsUS6566229B2May 20, 2003
Method of forming an insulating layer in a trench isolation type semiconductor device
SAMSUNG ELECTRONICS CO LTD102 citations97
US6756654B2Jun 29, 2004
Structure of trench isolation and a method of forming the same
SAMSUNG ELECTRONICS CO LTD57 citations95
US6683354B2Jan 27, 2004
Semiconductor device having trench isolation layer and a method of forming the same
SAMSUNG ELECTRONICS CO LTD51 citations95
US6251746B1Jun 26, 2001
Methods of forming trench isolation regions having stress-reducing nitride layers therein
SAMSUNG ELECTRONICS CO LTD66 citations94
US7160787B2Jan 9, 2007
Structure of trench isolation and a method of forming the same
SAMSUNG ELECTRONICS CO LTD31 citations92
US6699799B2Mar 2, 2004
Method of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD36 citations92
US6593207B2Jul 15, 2003
Method of forming a trench device isolation structure with upper liner pattern
SAMSUNG ELECTRONICS CO LTD25 citations92
US6121110ASep 19, 2000
Trench isolation method for semiconductor device
SAMSUNG ELECTRONICS CO LTD40 citations92
US11239269B2Feb 1, 2022
Image sensor
SAMSUNG ELECTRONICS CO LTD7 citations85
US7807543B2Oct 5, 2010
Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID)
SAMSUNG ELECTRONICS CO LTD8 citations83
US7351661B2Apr 1, 2008
Semiconductor device having trench isolation layer and a method of forming the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US6740955B1May 25, 2004
Trench device isolation structure
SAMSUNG ELECTRONICS CO LTD16 citations83
US6583025B2Jun 24, 2003
Method of forming a trench isolation structure comprising annealing the oxidation barrier layer thereof in a furnace
SAMSUNG ELECTRONICS CO LTD8 citations74
US12068337B2Aug 20, 2024
Image sensor
SAMSUNG ELECTRONICS CO LTD2 citations73
US11652113B2May 16, 2023
Image sensor
SAMSUNG ELECTRONICS CO LTD2 citations73
US5677232AOct 14, 1997
Methods of fabricating combined field oxide/trench isolation regions
SAMSUNG ELECTRONICS CO LTD15 citations73
US6624041B2Sep 23, 2003
Method for forming trench type isolation film using annealing
SAMSUNG ELECTRONICS CO LTD6 citations63
US12408453B2Sep 2, 2025
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11462577B2Oct 4, 2022
Image device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US7785985B2Aug 31, 2010
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations62
US11257857B2Feb 22, 2022
Image sensors including photoelectric conversion devices, trench, supporter, and isolation layer
SAMSUNG ELECTRONICS CO LTD1 citations61
US7871897B2Jan 18, 2011
Method of forming shallow trench isolation regions in devices with NMOS and PMOS regions
SAMSUNG ELECTRONICS CO LTD5 citations61
US7514744B2Apr 7, 2009
Semiconductor device including carrier accumulation layers
SAMSUNG ELECTRONICS CO LTD4 citations61
US9484203B2Nov 1, 2016
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations60
US9449973B2Sep 20, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9230922B2Jan 5, 2016
Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US8877634B2Nov 4, 2014
Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern
SAMSUNG ELECTRONICS CO LTD0 citations41