P

Inventor

LEE JIAN-HSING

TW149 patents

Patents

50 patents
US6028324AFeb 22, 2000

Test structures for monitoring gate oxide defect densities and the plasma antenna effect

TAIWAN SEMICONDUCTOR MFG191 citations99
US6614693B1Sep 2, 2003

Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM

TAIWAN SEMICONDUCTOR MFG77 citations98
US6268992B1Jul 31, 2001

Displacement current trigger SCR

TAIWAN SEMICONDUCTOR MFG48 citations96
US6214670B1Apr 10, 2001

Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance

TAIWAN SEMICONDUCTOR MFG68 citations96
US6122201ASep 19, 2000

Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM

TAIWAN SEMICONDUCTOR MFG79 citations96
US6097066AAug 1, 2000

Electro-static discharge protection structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG77 citations96
US6066879AMay 23, 2000

Combined NMOS and SCR ESD protection device

TAIWAN SEMICONDUCTOR MFG75 citations96
US6055183AApr 25, 2000

Erase method of flash EEPROM by using snapback characteristic

TAIWAN SEMICONDUCTOR MFG54 citations96
US6049486AApr 11, 2000

Triple mode erase scheme for improving flash EEPROM cell threshold voltage (VT) cycling closure effect

TAIWAN SEMICONDUCTOR MFG57 citations96
US5872379AFeb 16, 1999

Low voltage turn-on SCR for ESD protection

TAIWAN SEMICONDUCTOR MFG73 citations96
US7910999B2Mar 22, 2011

Method for four direction low capacitance ESD protection

TAIWAN SEMICONDUCTOR MFG94 citations95
US5862078AJan 19, 1999

Mixed mode erase method to improve flash eeprom write/erase threshold closure

TAIWAN SEMICONDUCTOR MFG56 citations95
US5828605AOct 27, 1998

Snapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROM

TAIWAN SEMICONDUCTOR MFG95 citations95
US6960811B2Nov 1, 2005

Low capacitance ESD protection device, and integrated circuit including the same

TAIWAN SEMICONDUCTOR MFG28 citations93
US6937457B2Aug 30, 2005

Decoupling capacitor

TAIWAN SEMICONDUCTOR MFG37 citations93
US6645820B1Nov 11, 2003

Polycrystalline silicon diode string for ESD protection of different power supply connections

TAIWAN SEMICONDUCTOR MFG50 citations93
US6610262B1Aug 26, 2003

Depletion mode SCR for low capacitance ESD input protection

TAIWAN SEMICONDUCTOR MFG46 citations93
US6576934B2Jun 10, 2003

Embedded SCR protection device for output and input pad

TAIWAN SEMICONDUCTOR MFG34 citations93
US6492208B1Dec 10, 2002

Embedded SCR protection device for output and input pad

TAIWAN SEMICONDUCTOR MFG38 citations93
US6479872B1Nov 12, 2002

Dynamic substrate-coupled electrostatic discharging protection circuit

TAIWAN SEMICONDUCTOR MFG19 citations93
US6362035B1Mar 26, 2002

Channel stop ion implantation method for CMOS integrated circuits

TAIWAN SEMICONDUCTOR MFG26 citations93
US6323523B1Nov 27, 2001

N-type structure for n-type pull-up and down I/O protection circuit

TAIWAN SEMICONDUCTOR MFG25 citations93
US6306695B1Oct 23, 2001

Modified source side inserted anti-type diffusion ESD protection device

TAIWAN SEMICONDUCTOR MFG20 citations93
US6277723B1Aug 21, 2001

Plasma damage protection cell using floating N/P/N and P/N/P structure

TAIWAN SEMICONDUCTOR MFG24 citations93
US6271999B1Aug 7, 2001

ESD protection circuit for different power supplies

TAIWAN SEMICONDUCTOR MFG17 citations93
US6249414B1Jun 19, 2001

Displacement current trigger SCR

TAIWAN SEMICONDUCTOR MFG32 citations93
US6246075B1Jun 12, 2001

Test structures for monitoring gate oxide defect densities and the plasma antenna effect

TAIWAN SEMICONDUCTOR MFG16 citations93
US6190954B1Feb 20, 2001

Robust latchup-immune CMOS structure

TAIWAN SEMICONDUCTOR MFG36 citations93
US6171891B1Jan 9, 2001

Method of manufacture of CMOS device using additional implant regions to enhance ESD performance

TAIWAN SEMICONDUCTOR MFG32 citations93
US5898205AApr 27, 1999

Enhanced ESD protection circuitry

TAIWAN SEMICONDUCTOR MFG38 citations93
US5891792AApr 6, 1999

ESD device protection structure and process with high tilt angle GE implant

TAIWAN SEMICONDUCTOR MFG28 citations93
US5811856ASep 22, 1998

Layout of ESD input-protection circuit

TAIWAN SEMICONDUCTOR MFG23 citations93
US5565790AOct 15, 1996

ESD protection circuit with field transistor clamp and resistor in the gate circuit of a clamp triggering FET

TAIWAN SEMICONDUCTOR MFG44 citations93
US5563525AOct 8, 1996

ESD protection device with FET circuit

TAIWAN SEMICONDUCTOR MFG23 citations93
US6614078B2Sep 2, 2003

Highly latchup-immune CMOS I/O structures

TAIWAN SEMICONDUCTOR MFG21 citations92
US6420221B1Jul 16, 2002

Method of manufacturing a highly latchup-immune CMOS I/O structure

TAIWAN SEMICONDUCTOR MFG24 citations92
US6323074B1Nov 27, 2001

High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain

TAIWAN SEMICONDUCTOR MFG44 citations92
US6258672B1Jul 10, 2001

Method of fabricating an ESD protection device

TAIWAN SEMICONDUCTOR MFG20 citations92
US6049484AApr 11, 2000

Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase

TAIWAN SEMICONDUCTOR MFG43 citations92
US5949717ASep 7, 1999

Method to improve flash EEPROM cell write/erase threshold voltage closure

TAIWAN SEMICONDUCTOR MFG41 citations92
US5903499AMay 11, 1999

Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase

TAIWAN SEMICONDUCTOR MFG21 citations92
US5838618ANov 17, 1998

Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure

TAIWAN SEMICONDUCTOR MFG23 citations92
US5726933AMar 10, 1998

Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM

TAIWAN SEMICONDUCTOR MFG43 citations92
US8344416B2Jan 1, 2013

Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits

TAIWAN SEMICONDUCTOR MFG14 citations91
US7148574B2Dec 12, 2006

Bonding pad structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG30 citations91
US6653709B2Nov 25, 2003

CMOS output circuit with enhanced ESD protection using drain side implantation

TAIWAN SEMICONDUCTOR MFG19 citations91
US6552372B2Apr 22, 2003

Integrated circuit having improved ESD protection

TAIWAN SEMICONDUCTOR MFG26 citations91
US6459127B1Oct 1, 2002

Uniform current distribution SCR device for high voltage ESD protection

TAIWAN SEMICONDUCTOR MFG26 citations91
US6444511B1Sep 3, 2002

CMOS output circuit with enhanced ESD protection using drain side implantation

TAIWAN SEMICONDUCTOR MFG43 citations91
US6400542B1Jun 4, 2002

ESD protection circuit for different power supplies

TAIWAN SEMICONDUCTOR MFG18 citations91

Showing the top 50 of 149 patents by PatentIndex Score.