Inventor
TSENG HUA-CHOU
TW41 patents
⚠️ This page may combine multiple inventors who share the name “TSENG HUA-CHOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
22 patentsUS6368941B1Apr 9, 2002
Fabrication of a shallow trench isolation by plasma oxidation
UNITED MICROELECTRONICS CORP170 citations98
US6521470B1Feb 18, 2003
Method of measuring thickness of epitaxial layer
UNITED MICROELECTRONICS CORP95 citations94
US6015753AJan 18, 2000
Method of forming a self-aligned silicide
UNITED MICROELECTRONICS CORP26 citations93
US6489206B2Dec 3, 2002
Method for forming self-aligned local-halo metal-oxide-semiconductor device
UNITED MICROELECTRONICS CORP30 citations92
US6323073B1Nov 27, 2001
Method for forming doped regions on an SOI device
UNITED MICROELECTRONICS CORP22 citations92
US6294415B1Sep 25, 2001
Method of fabricating a MOS transistor
UNITED MICROELECTRONICS CORP19 citations84
US6238988B1May 29, 2001
Method of forming a MOS transistor
UNITED MICROELECTRONICS CORP17 citations84
US7253480B2Aug 7, 2007
Structure and fabrication method of electrostatic discharge protection circuit
UNITED MICROELECTRONICS CORP6 citations74
US6855611B2Feb 15, 2005
Fabrication method of an electrostatic discharge protection circuit with a low resistant current path
UNITED MICROELECTRONICS CORP7 citations74
US6559016B2May 6, 2003
Method of manufacturing low-leakage, high-performance device
UNITED MICROELECTRONICS CORP8 citations74
US7321285B2Jan 22, 2008
Method for fabricating a transformer integrated with a semiconductor structure
UNITED MICROELECTRONICS CORP6 citations73
US6509218B2Jan 21, 2003
Front stage process of a fully depleted silicon-on-insulator device
UNITED MICROELECTRONICS CORP7 citations73
US6476448B2Nov 5, 2002
Front stage process of a fully depleted silicon-on-insulator device and a structure thereof
UNITED MICROELECTRONICS CORP8 citations73
US6190982B1Feb 20, 2001
Method of fabricating a MOS transistor on a semiconductor wafer
UNITED MICROELECTRONICS CORP4 citations63
US6063660AMay 16, 2000
Fabricating method of stacked type capacitor
UNITED MICROELECTRONICS CORP5 citations63
US7271428B2Sep 18, 2007
Heterojunction bipolar transistor
UNITED MICROELECTRONICS CORP3 citations62
US6174776B1Jan 16, 2001
Method for forming gate contact in complementary metal oxide semiconductor
UNITED MICROELECTRONICS CORP6 citations60
US7167072B2Jan 23, 2007
Method of fabricating inductor and structure formed therefrom
UNITED MICROELECTRONICS CORP4 citations56
US7049240B2May 23, 2006
Formation method of SiGe HBT
UNITED MICROELECTRONICS CORP6 citations56
US7367113B2May 6, 2008
Method for fabricating a transformer integrated with a semiconductor structure
UNITED MICROELECTRONICS CORP0 citations51
US6881640B2Apr 19, 2005
Fabrication method for heterojunction bipolar transistor
UNITED MICROELECTRONICS CORP1 citations51
US7705428B2Apr 27, 2010
Varactor
UNITED MICROELECTRONICS CORP0 citations41
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS10276716B2Apr 30, 2019
Transistor with asymmetric source and drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11450769B2Sep 20, 2022
Transistor with asymmetric source and drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964814B2Mar 30, 2021
Transistor with asymmetric source and drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9196751B2Nov 24, 2015
Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US9431251B2Aug 30, 2016
Semiconductor device having a double deep well and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10243075B2Mar 26, 2019
Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10102972B2Oct 16, 2018
Method of forming capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9818866B2Nov 14, 2017
Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10068836B2Sep 4, 2018
Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9583564B2Feb 28, 2017
Isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations37