Inventor · disambiguated record
Senaka Kanakamedala
Also filed as: KANAKAMEDALA SENAKA · KANAKAMEDALA SENAKA KRISHNA
74 granted patents·26 pending applications·1,075 citations·filing 2014–2024
99Inventor score
Top patents by PatentIndex Score
100 records- 0199US11244953B2Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·10 cites·13 claims
- 0299US10256247B1Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·77 cites·10 claims
- 0399US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 0499US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 0598US11631686B2Three-dimensional memory array including dual work function floating gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 18, 2023·6 cites·15 claims
- 0698US11621277B2Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 4, 2023·5 cites·8 claims
- 0798US11296101B2Three-dimensional memory device including an inter-tier etch stop layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·9 cites·21 claims
- 0898US11201139B2Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·7 cites·20 claims
- 0998US11171097B2Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 9, 2021·9 cites·18 claims
- 1098US11145628B1Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 12, 2021·6 cites·20 claims
- 1198US10910272B1Reusable support substrate for formation and transfer of semiconductor devices and methods of using the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 2, 2021·25 cites·19 claims
- 1298US10438964B2Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 8, 2019·40 cites·7 claims
- 1398US10199434B1Three-dimensional cross rail phase change memory device and method of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 5, 2019·23 cites·15 claims
- 1498US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 1598US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 1698US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 1798US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
- 1898US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 1997US11398496B2Three-dimensional memory device employing thinned insulating layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·5 cites·10 claims
- 2097US11393780B2Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
- 2197US10529620B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 7, 2020·23 cites·10 claims
- 2297US10453854B2Three-dimensional memory device with thickened word lines in terrace regionSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 22, 2019·25 cites·11 claims
- 2397US9984963B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 29, 2018·37 cites·17 claims
- 2497US9691884B2Monolithic three dimensional NAND strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 27, 2017·41 cites·42 claims
- 2597US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
- 2696US11482531B2Three-dimensional memory device including multi-bit charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 25, 2022·4 cites·13 claims
- 2796US10700086B2Three-dimensional flat NAND memory device having high mobility channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 30, 2020·12 cites·9 claims
- 2896US10622369B2Three-dimensional memory device including contact via structures that extend through word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 14, 2020·18 cites·10 claims
- 2996US9806090B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·18 cites·11 claims
- 3096US9570460B2Spacer passivation for high-aspect ratio opening film removal and cleaningSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·15 cites·21 claims
- 3196US9379124B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·24 cites·19 claims
- 3296US9305932B2Methods of making three dimensional NAND devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·23 cites·24 claims
- 3395US10461163B2Three-dimensional memory device with thickened word lines in terrace region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 29, 2019·14 cites·21 claims
- 3495US10128261B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 13, 2018·14 cites·25 claims
- 3595US9484357B2Selective blocking dielectric formation in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 1, 2016·28 cites·24 claims
- 3694US10381364B2Three-dimensional memory device including vertically offset drain select level layers and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 13, 2019·11 cites·8 claims
- 3793US10748925B1Three-dimensional memory device containing channels with laterally pegged dielectric coresSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 18, 2020·15 cites·13 claims
- 3893US9570455B2Metal word lines for three dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 14, 2017·14 cites·24 claims
- 3992US11114406B2Warpage-compensated bonded structure including a support chip and a three-dimensional memory chipSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 7, 2021·8 cites·6 claims
- 4092US10847408B2Warpage-compensated bonded structure including a support chip and a three-dimensional memory chipSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 24, 2020·8 cites·14 claims
- 4192US9397107B2Methods of making three dimensional NAND devicesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 19, 2016·12 cites·17 claims
- 4290US10622368B2Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 14, 2020·7 cites·15 claims
- 4389US9812463B2Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·6 cites·26 claims
- 4489US9379132B2NAND memory strings and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·9 cites·25 claims
- 4587US12317502B2Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted May 27, 2025·1 cites·1 claims
- 4687US11387244B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 12, 2022·2 cites·10 claims
- 4782US11515250B2Three dimensional semiconductor device containing composite contact via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 29, 2022·1 cites·20 claims
- 4882US11437270B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 6, 2022·2 cites·20 claims
- 4980US11489043B2Three-dimensional memory device employing thinned insulating layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 1, 2022·1 cites·11 claims
- 5080US11469241B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 11, 2022·1 cites·23 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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