Inventor
BOHR MARK
US70 patents
⚠️ This page may combine multiple inventors who share the name “BOHR MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
45 patentsUS6919238B2Jul 19, 2005
Silicon on insulator (SOI) transistor and methods of fabrication
INTEL CORP82 citations98
US7491988B2Feb 17, 2009
Transistors with increased mobility in the channel zone and method of fabrication
INTEL CORP139 citations97
US7276801B2Oct 2, 2007
Designs and methods for conductive bumps
INTEL CORP56 citations96
US6933222B2Aug 23, 2005
Microcircuit fabrication and interconnection
INTEL CORP53 citations96
US6686247B1Feb 3, 2004
Self-aligned contacts to gates
INTEL CORP56 citations96
US9831306B2Nov 28, 2017
Self-aligned gate edge and local interconnect and method to fabricate same
INTEL CORP29 citations93
US7704833B2Apr 27, 2010
Method of forming abrupt source drain metal gate transistors
INTEL CORP22 citations93
US7470620B2Dec 30, 2008
Microcircuit fabrication and interconnection
INTEL CORP26 citations93
US7348675B2Mar 25, 2008
Microcircuit fabrication and interconnection
INTEL CORP35 citations93
US7541239B2Jun 2, 2009
Selective spacer formation on transistors of different classes on the same device
INTEL CORP26 citations92
US7202514B2Apr 10, 2007
Self aligned compact bipolar junction transistor layout and method of making same
INTEL CORP16 citations92
US6703685B2Mar 9, 2004
Super self-aligned collector device for mono-and hetero bipolar junction transistors
INTEL CORP15 citations92
US7662674B2Feb 16, 2010
Methods of forming electromigration and thermal gradient based fuse structures
INTEL CORP10 citations84
US10319812B2Jun 11, 2019
Self-aligned gate edge and local interconnect and method to fabricate same
INTEL CORP9 citations83
US10192783B2Jan 29, 2019
Gate contact structure over active gate and method to fabricate same
INTEL CORP4 citations83
US7422950B2Sep 9, 2008
Strained silicon MOS device with box layer between the source and drain regions
INTEL CORP10 citations81
US7312155B2Dec 25, 2007
Forming self-aligned nano-electrodes
INTEL CORP8 citations74
US7157380B2Jan 2, 2007
Damascene process for fabricating interconnect layers in an integrated circuit
INTEL CORP9 citations74
US7112859B2Sep 26, 2006
Stepped tip junction with spacer layer
INTEL CORP7 citations74
US7109102B2Sep 19, 2006
Self-aligned contacts to gates
INTEL CORP5 citations74
US6887780B2May 3, 2005
Concentration graded carbon doped oxide
INTEL CORP8 citations74
US11462536B2Oct 4, 2022
Integrated circuit structures having asymmetric source and drain structures
INTEL CORP5 citations73
US11373987B2Jun 28, 2022
Device, method and system for providing a stacked arrangement of integrated circuit dies
INTEL CORP2 citations73
US11373999B2Jun 28, 2022
Deep trench via for three-dimensional integrated circuit
INTEL CORP3 citations73
US10877068B2Dec 29, 2020
High density and fine pitch interconnect structures in an electric test apparatus
INTEL CORP2 citations73
US7015085B2Mar 21, 2006
Super self-aligned collector device for mono-and hetero bipolar junction transistors and method of making same
INTEL CORP7 citations73
US7005359B2Feb 28, 2006
Bipolar junction transistor with improved extrinsic base region and method of fabrication
INTEL CORP6 citations73
US11410928B2Aug 9, 2022
Device layer interconnects
INTEL CORP1 citations72
US11387198B2Jul 12, 2022
Device, system and method for providing inductor structures
INTEL CORP3 citations72
US11004739B2May 11, 2021
Gate contact structure over active gate and method to fabricate same
INTEL CORP1 citations72
US10790354B2Sep 29, 2020
Self-aligned gate edge and local interconnect
INTEL CORP2 citations72
US11652060B2May 16, 2023
Die interconnection scheme for providing a high yielding process for high performance microprocessors
INTEL CORP3 citations70
US11749663B2Sep 5, 2023
Device, method and system for providing a stacked arrangement of integrated circuit dies
INTEL CORP0 citations63
US7560780B2Jul 14, 2009
Active region spacer for semiconductor devices and method to form the same
INTEL CORP4 citations63
US7091610B2Aug 15, 2006
Self-aligned contacts to gates
INTEL CORP4 citations63
US6495897B1Dec 17, 2002
Integrated circuit having etch-resistant layer substantially covering shallow trench regions
INTEL CORP2 citations63
US6362074B2Mar 26, 2002
Integrated circuit processing with improved gate electrode fabrication
INTEL CORP3 citations63
US12519058B2Jan 6, 2026
Device layer interconnects
INTEL CORP0 citations62
US12278144B2Apr 15, 2025
Gate contact structure over active gate and method to fabricate same
INTEL CORP0 citations62
US12100705B2Sep 24, 2024
Deep trench via for three-dimensional integrated circuit
INTEL CORP0 citations62
US11881452B2Jan 23, 2024
Device layer interconnects
INTEL CORP0 citations62
US11563081B2Jan 24, 2023
Self-aligned gate edge and local interconnect
INTEL CORP0 citations62
US11249113B2Feb 15, 2022
High density and fine pitch interconnect structures in an electric test apparatus
INTEL CORP0 citations62
US11201129B2Dec 14, 2021
Designs and methods for conductive bumps
INTEL CORP0 citations62
US7952194B2May 31, 2011
Silicon interposer-based hybrid voltage regulator system for VLSI devices
INTEL CORP4 citations62
KUHN KELIN J
2 patentsDUBIN VALERY M
2 patentsPETHE ABHIJIT JAYANT
1 patentShowing the top 50 of 70 patents by PatentIndex Score.