P

Inventor

BOHR MARK

US70 patents
⚠️ This page may combine multiple inventors who share the name “BOHR MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

45 patents
US6919238B2Jul 19, 2005

Silicon on insulator (SOI) transistor and methods of fabrication

INTEL CORP82 citations98
US7491988B2Feb 17, 2009

Transistors with increased mobility in the channel zone and method of fabrication

INTEL CORP139 citations97
US7276801B2Oct 2, 2007

Designs and methods for conductive bumps

INTEL CORP56 citations96
US6933222B2Aug 23, 2005

Microcircuit fabrication and interconnection

INTEL CORP53 citations96
US6686247B1Feb 3, 2004

Self-aligned contacts to gates

INTEL CORP56 citations96
US9831306B2Nov 28, 2017

Self-aligned gate edge and local interconnect and method to fabricate same

INTEL CORP29 citations93
US7704833B2Apr 27, 2010

Method of forming abrupt source drain metal gate transistors

INTEL CORP22 citations93
US7470620B2Dec 30, 2008

Microcircuit fabrication and interconnection

INTEL CORP26 citations93
US7348675B2Mar 25, 2008

Microcircuit fabrication and interconnection

INTEL CORP35 citations93
US7541239B2Jun 2, 2009

Selective spacer formation on transistors of different classes on the same device

INTEL CORP26 citations92
US7202514B2Apr 10, 2007

Self aligned compact bipolar junction transistor layout and method of making same

INTEL CORP16 citations92
US6703685B2Mar 9, 2004

Super self-aligned collector device for mono-and hetero bipolar junction transistors

INTEL CORP15 citations92
US7662674B2Feb 16, 2010

Methods of forming electromigration and thermal gradient based fuse structures

INTEL CORP10 citations84
US10319812B2Jun 11, 2019

Self-aligned gate edge and local interconnect and method to fabricate same

INTEL CORP9 citations83
US10192783B2Jan 29, 2019

Gate contact structure over active gate and method to fabricate same

INTEL CORP4 citations83
US7422950B2Sep 9, 2008

Strained silicon MOS device with box layer between the source and drain regions

INTEL CORP10 citations81
US7312155B2Dec 25, 2007

Forming self-aligned nano-electrodes

INTEL CORP8 citations74
US7157380B2Jan 2, 2007

Damascene process for fabricating interconnect layers in an integrated circuit

INTEL CORP9 citations74
US7112859B2Sep 26, 2006

Stepped tip junction with spacer layer

INTEL CORP7 citations74
US7109102B2Sep 19, 2006

Self-aligned contacts to gates

INTEL CORP5 citations74
US6887780B2May 3, 2005

Concentration graded carbon doped oxide

INTEL CORP8 citations74
US11462536B2Oct 4, 2022

Integrated circuit structures having asymmetric source and drain structures

INTEL CORP5 citations73
US11373987B2Jun 28, 2022

Device, method and system for providing a stacked arrangement of integrated circuit dies

INTEL CORP2 citations73
US11373999B2Jun 28, 2022

Deep trench via for three-dimensional integrated circuit

INTEL CORP3 citations73
US10877068B2Dec 29, 2020

High density and fine pitch interconnect structures in an electric test apparatus

INTEL CORP2 citations73
US7015085B2Mar 21, 2006

Super self-aligned collector device for mono-and hetero bipolar junction transistors and method of making same

INTEL CORP7 citations73
US7005359B2Feb 28, 2006

Bipolar junction transistor with improved extrinsic base region and method of fabrication

INTEL CORP6 citations73
US11410928B2Aug 9, 2022

Device layer interconnects

INTEL CORP1 citations72
US11387198B2Jul 12, 2022

Device, system and method for providing inductor structures

INTEL CORP3 citations72
US11004739B2May 11, 2021

Gate contact structure over active gate and method to fabricate same

INTEL CORP1 citations72
US10790354B2Sep 29, 2020

Self-aligned gate edge and local interconnect

INTEL CORP2 citations72
US11652060B2May 16, 2023

Die interconnection scheme for providing a high yielding process for high performance microprocessors

INTEL CORP3 citations70
US11749663B2Sep 5, 2023

Device, method and system for providing a stacked arrangement of integrated circuit dies

INTEL CORP0 citations63
US7560780B2Jul 14, 2009

Active region spacer for semiconductor devices and method to form the same

INTEL CORP4 citations63
US7091610B2Aug 15, 2006

Self-aligned contacts to gates

INTEL CORP4 citations63
US6495897B1Dec 17, 2002

Integrated circuit having etch-resistant layer substantially covering shallow trench regions

INTEL CORP2 citations63
US6362074B2Mar 26, 2002

Integrated circuit processing with improved gate electrode fabrication

INTEL CORP3 citations63
US12519058B2Jan 6, 2026

Device layer interconnects

INTEL CORP0 citations62
US12278144B2Apr 15, 2025

Gate contact structure over active gate and method to fabricate same

INTEL CORP0 citations62
US12100705B2Sep 24, 2024

Deep trench via for three-dimensional integrated circuit

INTEL CORP0 citations62
US11881452B2Jan 23, 2024

Device layer interconnects

INTEL CORP0 citations62
US11563081B2Jan 24, 2023

Self-aligned gate edge and local interconnect

INTEL CORP0 citations62
US11249113B2Feb 15, 2022

High density and fine pitch interconnect structures in an electric test apparatus

INTEL CORP0 citations62
US11201129B2Dec 14, 2021

Designs and methods for conductive bumps

INTEL CORP0 citations62
US7952194B2May 31, 2011

Silicon interposer-based hybrid voltage regulator system for VLSI devices

INTEL CORP4 citations62

KUHN KELIN J

2 patents

DUBIN VALERY M

2 patents

PETHE ABHIJIT JAYANT

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.