P

Inventor

MEHROTRA MANOJ

US55 patents
⚠️ This page may combine multiple inventors who share the name “MEHROTRA MANOJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

42 patents
US7960238B2Jun 14, 2011

Multiple indium implant methods and devices and integrated circuits therefrom

TEXAS INSTRUMENTS INC118 citations97
US6987061B2Jan 17, 2006

Dual salicide process for optimum performance

TEXAS INSTRUMENTS INC28 citations92
US6686300B2Feb 3, 2004

Sub-critical-dimension integrated circuit features

TEXAS INSTRUMENTS INC33 citations92
US7344929B2Mar 18, 2008

Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity

TEXAS INSTRUMENTS INC16 citations84
US7199020B2Apr 3, 2007

Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices

TEXAS INSTRUMENTS INC12 citations84
US6258644B1Jul 10, 2001

Mixed voltage CMOS process for high reliability and high performance core and I/O transistors with reduced mask steps

TEXAS INSTRUMENTS INC17 citations84
US7846783B2Dec 7, 2010

Use of poly resistor implant to dope poly gates

TEXAS INSTRUMENTS INC8 citations83
US7736983B2Jun 15, 2010

High threshold NMOS source-drain formation with As, P and C to reduce damage

TEXAS INSTRUMENTS INC9 citations83
US6482688B2Nov 19, 2002

Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate

TEXAS INSTRUMENTS INC14 citations80
US6743705B2Jun 1, 2004

Transistor with improved source/drain extension dopant concentration

TEXAS INSTRUMENTS INC10 citations74
US6677208B2Jan 13, 2004

Transistor with bottomwall/sidewall junction capacitance reduction region and method

TEXAS INSTRUMENTS INC10 citations74
US9000539B2Apr 7, 2015

Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance

TEXAS INSTRUMENTS INC4 citations73
US6352900B1Mar 5, 2002

Controlled oxide growth over polysilicon gates for improved transistor characteristics

TEXAS INSTRUMENTS INC12 citations73
US12272739B2Apr 8, 2025

Fin-based laterally-diffused metal-oxide semiconductor field effect transistor

TEXAS INSTRUMENTS INC1 citations64
US7615458B2Nov 10, 2009

Activation of CMOS source/drain extensions by ultra-high temperature anneals

TEXAS INSTRUMENTS INC3 citations63
US12581718B2Mar 17, 2026

Raised source/drain transistor

TEXAS INSTRUMENTS INC0 citations62
US12464744B2Nov 4, 2025

Low leakage Schottky diode

TEXAS INSTRUMENTS INC0 citations62
US11532758B2Dec 20, 2022

Low leakage Schottky diode

TEXAS INSTRUMENTS INC0 citations62
US7611939B2Nov 3, 2009

Semiconductor device manufactured using a laminated stress layer

TEXAS INSTRUMENTS INC2 citations62
US7211481B2May 1, 2007

Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer

TEXAS INSTRUMENTS INC2 citations62
US6737325B1May 18, 2004

Method and system for forming a transistor having source and drain extensions

TEXAS INSTRUMENTS INC2 citations62
US10978353B2Apr 13, 2021

High mobility transistors

TEXAS INSTRUMENTS INC0 citations60
US7691700B2Apr 6, 2010

Multi-stage implant to improve device characteristics

TEXAS INSTRUMENTS INC2 citations60
US7524777B2Apr 28, 2009

Method for manufacturing an isolation structure using an energy beam treatment

TEXAS INSTRUMENTS INC3 citations60
US7510923B2Mar 31, 2009

Slim spacer implementation to improve drive current

TEXAS INSTRUMENTS INC6 citations60
US11417646B2Aug 16, 2022

NPN heterojunction bipolar transistor in CMOS flow

TEXAS INSTRUMENTS INC0 citations56
US10026839B2Jul 17, 2018

Epitaxial source/drain differential spacers

TEXAS INSTRUMENTS INC0 citations52
US9960162B2May 1, 2018

Hybrid high-k first and high-k last replacement gate process

TEXAS INSTRUMENTS INC0 citations52
US9805986B2Oct 31, 2017

High mobility transistors

TEXAS INSTRUMENTS INC0 citations52
US9401365B2Jul 26, 2016

Epitaxial source/drain differential spacers

TEXAS INSTRUMENTS INC1 citations52
US9397100B2Jul 19, 2016

Hybrid high-k first and high-k last replacement gate process

TEXAS INSTRUMENTS INC0 citations52
US9397182B2Jul 19, 2016

Transistor structure with silicided source and drain extensions and process for fabrication

TEXAS INSTRUMENTS INC0 citations52
US9356131B2May 31, 2016

Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance

TEXAS INSTRUMENTS INC0 citations52
US9324717B2Apr 26, 2016

High mobility transistors

TEXAS INSTRUMENTS INC0 citations52
US8906770B2Dec 9, 2014

Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure

TEXAS INSTRUMENTS INC0 citations52
US8592902B1Nov 26, 2013

Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure

TEXAS INSTRUMENTS INC0 citations52
US7670917B2Mar 2, 2010

Semiconductor device made by using a laser anneal to incorporate stress into a channel region

TEXAS INSTRUMENTS INC1 citations52
US6599802B2Jul 29, 2003

Low-voltage-Vt (CMOS) transistor design using a single mask and without any additional implants by way of tailoring the effective channel length (Leff)

TEXAS INSTRUMENTS INC0 citations52
US6635584B2Oct 21, 2003

Versatile system for forming uniform wafer surfaces

TEXAS INSTRUMENTS INC1 citations51
US10163725B2Dec 25, 2018

High mobility transistors

TEXAS INSTRUMENTS INC0 citations49
US9496262B2Nov 15, 2016

High mobility transistors

TEXAS INSTRUMENTS INC0 citations49
US9385117B2Jul 5, 2016

NPN heterojunction bipolar transistor in CMOS flow

TEXAS INSTRUMENTS INC1 citations48

MEHROTRA MANOJ

3 patents

UNIV NORTH CAROLINA STATE

2 patents

QUALCOMM INC

2 patents

NIIMI HIROAKI

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.