Inventor
MEHROTRA MANOJ
US55 patents
⚠️ This page may combine multiple inventors who share the name “MEHROTRA MANOJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
42 patentsUS7960238B2Jun 14, 2011
Multiple indium implant methods and devices and integrated circuits therefrom
TEXAS INSTRUMENTS INC118 citations97
US6987061B2Jan 17, 2006
Dual salicide process for optimum performance
TEXAS INSTRUMENTS INC28 citations92
US6686300B2Feb 3, 2004
Sub-critical-dimension integrated circuit features
TEXAS INSTRUMENTS INC33 citations92
US7344929B2Mar 18, 2008
Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity
TEXAS INSTRUMENTS INC16 citations84
US7199020B2Apr 3, 2007
Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices
TEXAS INSTRUMENTS INC12 citations84
US6258644B1Jul 10, 2001
Mixed voltage CMOS process for high reliability and high performance core and I/O transistors with reduced mask steps
TEXAS INSTRUMENTS INC17 citations84
US7846783B2Dec 7, 2010
Use of poly resistor implant to dope poly gates
TEXAS INSTRUMENTS INC8 citations83
US7736983B2Jun 15, 2010
High threshold NMOS source-drain formation with As, P and C to reduce damage
TEXAS INSTRUMENTS INC9 citations83
US6482688B2Nov 19, 2002
Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate
TEXAS INSTRUMENTS INC14 citations80
US6743705B2Jun 1, 2004
Transistor with improved source/drain extension dopant concentration
TEXAS INSTRUMENTS INC10 citations74
US6677208B2Jan 13, 2004
Transistor with bottomwall/sidewall junction capacitance reduction region and method
TEXAS INSTRUMENTS INC10 citations74
US9000539B2Apr 7, 2015
Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance
TEXAS INSTRUMENTS INC4 citations73
US6352900B1Mar 5, 2002
Controlled oxide growth over polysilicon gates for improved transistor characteristics
TEXAS INSTRUMENTS INC12 citations73
US12272739B2Apr 8, 2025
Fin-based laterally-diffused metal-oxide semiconductor field effect transistor
TEXAS INSTRUMENTS INC1 citations64
US7615458B2Nov 10, 2009
Activation of CMOS source/drain extensions by ultra-high temperature anneals
TEXAS INSTRUMENTS INC3 citations63
US12581718B2Mar 17, 2026
Raised source/drain transistor
TEXAS INSTRUMENTS INC0 citations62
US12464744B2Nov 4, 2025
Low leakage Schottky diode
TEXAS INSTRUMENTS INC0 citations62
US11532758B2Dec 20, 2022
Low leakage Schottky diode
TEXAS INSTRUMENTS INC0 citations62
US7611939B2Nov 3, 2009
Semiconductor device manufactured using a laminated stress layer
TEXAS INSTRUMENTS INC2 citations62
US7211481B2May 1, 2007
Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer
TEXAS INSTRUMENTS INC2 citations62
US6737325B1May 18, 2004
Method and system for forming a transistor having source and drain extensions
TEXAS INSTRUMENTS INC2 citations62
US10978353B2Apr 13, 2021
High mobility transistors
TEXAS INSTRUMENTS INC0 citations60
US7691700B2Apr 6, 2010
Multi-stage implant to improve device characteristics
TEXAS INSTRUMENTS INC2 citations60
US7524777B2Apr 28, 2009
Method for manufacturing an isolation structure using an energy beam treatment
TEXAS INSTRUMENTS INC3 citations60
US7510923B2Mar 31, 2009
Slim spacer implementation to improve drive current
TEXAS INSTRUMENTS INC6 citations60
US11417646B2Aug 16, 2022
NPN heterojunction bipolar transistor in CMOS flow
TEXAS INSTRUMENTS INC0 citations56
US10026839B2Jul 17, 2018
Epitaxial source/drain differential spacers
TEXAS INSTRUMENTS INC0 citations52
US9960162B2May 1, 2018
Hybrid high-k first and high-k last replacement gate process
TEXAS INSTRUMENTS INC0 citations52
US9805986B2Oct 31, 2017
High mobility transistors
TEXAS INSTRUMENTS INC0 citations52
US9401365B2Jul 26, 2016
Epitaxial source/drain differential spacers
TEXAS INSTRUMENTS INC1 citations52
US9397100B2Jul 19, 2016
Hybrid high-k first and high-k last replacement gate process
TEXAS INSTRUMENTS INC0 citations52
US9397182B2Jul 19, 2016
Transistor structure with silicided source and drain extensions and process for fabrication
TEXAS INSTRUMENTS INC0 citations52
US9356131B2May 31, 2016
Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance
TEXAS INSTRUMENTS INC0 citations52
US9324717B2Apr 26, 2016
High mobility transistors
TEXAS INSTRUMENTS INC0 citations52
US8906770B2Dec 9, 2014
Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
TEXAS INSTRUMENTS INC0 citations52
US8592902B1Nov 26, 2013
Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
TEXAS INSTRUMENTS INC0 citations52
US7670917B2Mar 2, 2010
Semiconductor device made by using a laser anneal to incorporate stress into a channel region
TEXAS INSTRUMENTS INC1 citations52
US6599802B2Jul 29, 2003
Low-voltage-Vt (CMOS) transistor design using a single mask and without any additional implants by way of tailoring the effective channel length (Leff)
TEXAS INSTRUMENTS INC0 citations52
US6635584B2Oct 21, 2003
Versatile system for forming uniform wafer surfaces
TEXAS INSTRUMENTS INC1 citations51
US10163725B2Dec 25, 2018
High mobility transistors
TEXAS INSTRUMENTS INC0 citations49
US9496262B2Nov 15, 2016
High mobility transistors
TEXAS INSTRUMENTS INC0 citations49
US9385117B2Jul 5, 2016
NPN heterojunction bipolar transistor in CMOS flow
TEXAS INSTRUMENTS INC1 citations48
MEHROTRA MANOJ
3 patentsUS8435848B2May 7, 2013
PMOS SiGe-last integration process
MEHROTRA MANOJ5 citations71
US8877595B2Nov 4, 2014
Transistor structure with silicided source and drain extensions and process for fabrication
MEHROTRA MANOJ0 citations51
US8691661B2Apr 8, 2014
Trench with reduced silicon loss
MEHROTRA MANOJ1 citations51
UNIV NORTH CAROLINA STATE
2 patentsQUALCOMM INC
2 patentsNIIMI HIROAKI
1 patentShowing the top 50 of 55 patents by PatentIndex Score.