Inventor

SIDDIQUI SHAHAB

US54 patents

⚠️ This page may combine multiple inventors who share the name “SIDDIQUI SHAHAB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIDDIQUI SHAHAB

IBM

Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric

Methods and structure to form high K metal gate stack with single work-function metal

Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices

Multiple thickness gate dielectrics for replacement gate field effect transistors

Hybrid bonding interface for 3-dimensional chip integration

Method to create air gaps using non-plasma processes to damage ILD materials

Film planarization for low-k polymers used in semiconductor structures

Vertical transistor having an oxygen-blocking top spacer

TSV deep trench capacitor and anti-fuse structure

Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent

Semiconductor devices having different gate oxide thicknesses

Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

Vertical transistor having an oxygen-blocking layer

Structure and method of Tinv scaling for high k metal gate technology

Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric

Multi-plasma nitridation process for a gate dielectric

Methods and structure to form high K metal gate stack with single work-function metal

Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent

Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

Gate stacks with multiple high-κ dielectric layers

Gate oxide for nanosheet transistor devices

Gate oxide for nanosheet transistor devices

High-K dielectric structure for deep trench isolation

Method for eliminating via resistance shift in organic ILD

Fabrication of higher-K dielectrics

Fabrication of higher-k dielectrics

Annealing oxide gate dielectric layers for replacement metal gate field effect transistors

Structure and method of Tinv scaling for high k metal gate technology

Multiple thickness gate dielectrics for replacement gate field effect transistors

Metal interconnect and IC chip including metal interconnect

Metal interconnect forming methods and IC chip including metal interconnect

GLOBALFOUNDRIES INC

Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same

Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices

Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same

Multi-plasma nitridation process for a gate dielectric

Multi-plasma nitridation process for a gate dielectric

DE SOUZA JOEL P

Method to prevent surface decomposition of III-V compound semiconductors

Method to prevent surface decomposition of III-V compound semiconductors

Method to prevent surface decomposition of III-V compound semiconductors

CHUDZIK MICHAEL P

Structure and method of Tinv scaling for high κ metal gate technology

Fabrication of silicon oxide and oxynitride having sub-nanometer thickness

Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure

BRODSKY MARYJANE

Composite high-k gate dielectric stack for reducing gate leakage

Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices

JAIN SAMEER H

Replacement gate MOSFET with self-aligned diffusion contact

ANDO TAKASHI

Structure and method to form input/output devices

BARTH KARL W

Hybrid bonding interface for 3-dimensional chip integration

ADAMS CHARLOTTE DEWAN

Semiconductor devices having different gate oxide thicknesses

BARD INC C R

Carrying and storage case for external catheter system

PUREWICK CORP

Fluid collection assemblies including at least one securement body