Inventor
TOMISHIMA SHIGEKI
JP146 patents
⚠️ This page may combine multiple inventors who share the name “TOMISHIMA SHIGEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
44 patentsUS6480946B1Nov 12, 2002
Memory system for synchronized and high speed data transfer
MITSUBISHI ELECTRIC CORP181 citations99
US6125078ASep 26, 2000
Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system
MITSUBISHI ELECTRIC CORP116 citations99
US5877978AMar 2, 1999
Semiconductor memory device
MITSUBISHI ELECTRIC CORP314 citations99
US6618319B2Sep 9, 2003
Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system
MITSUBISHI ELECTRIC CORP79 citations98
US6438066B1Aug 20, 2002
Synchronous semiconductor memory device allowing control of operation mode in accordance with operation conditions of a system
MITSUBISHI ELECTRIC CORP93 citations98
US6310815B1Oct 30, 2001
Multi-bank semiconductor memory device suitable for integration with logic
MITSUBISHI ELECTRIC CORP98 citations97
US6489796B2Dec 3, 2002
Semiconductor device provided with boost circuit consuming less current
MITSUBISHI ELECTRIC CORP74 citations96
US6400632B1Jun 4, 2002
Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall
MITSUBISHI ELECTRIC CORP56 citations96
US6384674B2May 7, 2002
Semiconductor device having hierarchical power supply line structure improved in operating speed
MITSUBISHI ELECTRIC CORP73 citations96
US6314042B1Nov 6, 2001
Fast accessible semiconductor memory device
MITSUBISHI ELECTRIC CORP73 citations96
US6147925ANov 14, 2000
Semiconductor device allowing fast sensing with a low power supply voltage
MITSUBISHI ELECTRIC CORP80 citations96
US6081443AJun 27, 2000
Semiconductor memory device
MITSUBISHI ELECTRIC CORP246 citations96
US6067260AMay 23, 2000
Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access
MITSUBISHI ELECTRIC CORP69 citations96
US5909141AJun 1, 1999
Step-up potential supply circuit and semiconductor storage device
MITSUBISHI ELECTRIC CORP62 citations96
USRE36089EFeb 9, 1999
Column selecting circuit in semiconductor memory device
MITSUBISHI ELECTRIC CORP52 citations96
US5838627ANov 17, 1998
Arrangement of power supply and data input/output pads in semiconductor memory device
MITSUBISHI ELECTRIC CORP92 citations96
US5822264AOct 13, 1998
Dynamic semiconductor memory device with SOI structure and body refresh circuitry
MITSUBISHI ELECTRIC CORP84 citations96
US5687123ANov 11, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP66 citations96
US5617369AApr 1, 1997
Dynamic semiconductor memory device having excellent charge retention characteristics
MITSUBISHI ELECTRIC CORP50 citations96
US5604710AFeb 18, 1997
Arrangement of power supply and data input/output pads in semiconductor memory device
MITSUBISHI ELECTRIC CORP82 citations96
US5325336AJun 28, 1994
Semiconductor memory device having power line arranged in a meshed shape
MITSUBISHI ELECTRIC CORP47 citations96
US5321646AJun 14, 1994
Layout of a semiconductor memory device
MITSUBISHI ELECTRIC CORP68 citations96
US6385125B1May 7, 2002
Synchronous semiconductor integrated circuit device capable of test time reduction
MITSUBISHI ELECTRIC CORP57 citations95
US6646946B2Nov 11, 2003
Fast accessible semiconductor memory device
MITSUBISHI ELECTRIC CORP23 citations93
US6545926B2Apr 8, 2003
Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same
MITSUBISHI ELECTRIC CORP23 citations93
US6470467B2Oct 22, 2002
Synchronous semiconductor memory device capable of performing operation test at high speed while reducing burden on tester
MITSUBISHI ELECTRIC CORP47 citations93
US6414883B2Jul 2, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP18 citations93
US6377508B1Apr 23, 2002
Dynamic semiconductor memory device having excellent charge retention characteristics
MITSUBISHI ELECTRIC CORP31 citations93
US6373315B2Apr 16, 2002
Signal potential conversion circuit
MITSUBISHI ELECTRIC CORP42 citations93
US6333869B1Dec 25, 2001
Semiconductor memory device with readily changeable memory capacity
MITSUBISHI ELECTRIC CORP25 citations93
US6331956B1Dec 18, 2001
Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access
MITSUBISHI ELECTRIC CORP23 citations93
US6178122B1Jan 23, 2001
Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same
MITSUBISHI ELECTRIC CORP31 citations93
US6163493ADec 19, 2000
Semiconductor integrated circuit device with large internal bus width, including memory and logic circuit
MITSUBISHI ELECTRIC CORP32 citations93
US6163488ADec 19, 2000
Semiconductor device with antifuse
MITSUBISHI ELECTRIC CORP43 citations93
US6134178AOct 17, 2000
Synchronous semiconductor memory device suitable for merging with logic
MITSUBISHI ELECTRIC CORP34 citations93
US6125070ASep 26, 2000
Semiconductor memory device having multiple global I/O line pairs
MITSUBISHI ELECTRIC CORP36 citations93
US6097665AAug 1, 2000
Dynamic semiconductor memory device having excellent charge retention characteristics
MITSUBISHI ELECTRIC CORP24 citations93
US6078542AJun 20, 2000
Semiconductor memory device implementing multi-bank configuration with reduced number of signal lines
MITSUBISHI ELECTRIC CORP29 citations93
US6055206AApr 25, 2000
Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation
MITSUBISHI ELECTRIC CORP28 citations93
US5943273AAug 24, 1999
Semiconductor memory device
MITSUBISHI ELECTRIC CORP23 citations93
US5910181AJun 8, 1999
Semiconductor integrated circuit device comprising synchronous DRAM core and logic circuit integrated into a single chip and method of testing the synchronous DRAM core
MITSUBISHI ELECTRIC CORP40 citations93
US5870348AFeb 9, 1999
Dynamic semiconductor memory device having excellent charge retention characteristics
MITSUBISHI ELECTRIC CORP19 citations93
US5815454ASep 29, 1998
Semiconductor memory device having power line arranged in a meshed shape
MITSUBISHI ELECTRIC CORP17 citations93
US5774405AJun 30, 1998
Dynamic random access memory having an internal circuit using a boosted potential
MITSUBISHI ELECTRIC CORP35 citations93
INTEL CORP
4 patentsUS9761297B1Sep 12, 2017
Hidden refresh control in dynamic random access memory
INTEL CORP67 citations98
US10600462B2Mar 24, 2020
Bitcell state retention
INTEL CORP40 citations95
US9715916B1Jul 25, 2017
Supply-switched dual cell memory bitcell
INTEL CORP24 citations94
US9600183B2Mar 21, 2017
Apparatus, system and method for determining comparison information based on memory data
INTEL CORP30 citations94
RENESAS TECH CORP
2 patentsShowing the top 50 of 146 patents by PatentIndex Score.