Column selecting circuit in semiconductor memory device

Abstract

Column address A0-A11 is once predecoded by a first predecoder PD1, a second predecoder PD2, and a CDE buffer CDB and then applied to a column decoder CD. Column decoder CD selectively drives one of a plurality of column selecting lines CSL on the basis of the applied predecoded signals. This causes corresponding bit lines in respective memory cell arrays MCA1-MCA4 to be simultaneously selected. Column decoder CD includes a plurality of column drivers corresponding to the plurality of column selecting lines, and the column drivers are divided into a plurality of groups. The predecoded signals applied from second predecoder PD2 and CDE buffer CDB to column decoder CD are generated independently for respective groups, and signal lines for them are also distributed to respective groups. This causes the length of wiring of each predecoded signal line to be shortened.

What is claimed is: 
     
       1. A column selecting circuit for selecting a bit line in a semiconductor memory device comprising a memory cell array divided into a plurality of blocks, each of said blocks of said memory cell array including a plurality of word lines, a plurality of bit lines arranged crossing said word lines, and a plurality of memory cells arranged at respective crossings of said word lines and said bit lines, said column selecting circuit comprising: a plurality of column selecting lines for applying a selecting signal in common to corresponding bit lines of said memory cell array;   predecode means for predecoding an applied column address signal to provide a plurality of predecoded signals;   column decode means for decoding said predecoded signals to select one of said plurality of column selecting lines; and   wiring means for transmitting said predecoded signals to said column decode means;   said column decode means including a plurality of selecting signal providing means provided respectively for said plurality of column selecting lines for providing selecting signals to corresponding column selecting lines, respectively;   said plurality of selecting signal providing means being divided into a plurality of adjacent groups each including an equal number, greater than one, of said plurality of selecting signal providing means;   said predecode means providing independent predecoded signals for said respective groups of said plurality of selecting signal providing means; and   said wiring means having a wiring structure divided between said groups of said plurality of selecting signal providing means.   
     
     
       2. The column selecting circuit in a semiconductor memory device according to claim 1, wherein said plurality of groups of said plurality of selecting signal providing means are divided into a plurality of sub-groups;   said predecode means provides independent predecoded signals for said respective groups and for said respective sub-groups; and   said wiring means has a wiring structure implemented in hierarchies for transmitting said predecoded signals to said respective groups and to said respective sub-groups of said plurality of selecting signal providing means.   
     
     
       3. The column selecting circuit in a semiconductor memory device according to claim 2, wherein said plurality of sub-groups is implemented by subdividing each group of said plurality of groups; and   said wiring means has a part of it divided for respective groups and the rest of it divided for respective sub-groups.   
     
     
       4. The column selecting circuit in a semiconductor memory device according to claim 3, wherein said predecode means includes predecode means for said first hierarchy for generating independent predecoded signals for respective groups of said first hierarchy and predecode means for said second hierarchy for generating independent predecoded signals for respective groups of said second hierarchy.   
     
     
       5. For a memory cell array including a plurality of rows and columns of memory cells, a column selecting arrangement comprising: a plurality of column driver circuits each uniquely corresponding to a set of memory cell columns and including input terminals for accessing said set of memory cell columns in response to signals received at said input terminals, said plurality of column driver circuits being divided into a plurality of adjacent groups each including an equal number, greater than one, of said plurality of column driver circuits,   predecoder means responsive to an address input for generating a plurality of predecoded signals at a plurality of predecoder output terminals,   connecting means for mutually exclusively connecting groups of said predecoder output terminals to corresponding groups of said column driver circuits, and   column decoder buffer means including a predetermined number of buffer output terminals corresponding to each group of column driver circuits for applying a column decoder buffer output signal to input terminals of corresponding column driver circuits in response to said address input.   
     
     
       6. A column selecting arrangement according to claim 5, further comprising selector means for selecting one column from a set of memory columns accessed by one of said column driver circuits. 
     
     
       7. A column selecting arrangement according to claim 5, wherein each group of column driver circuits is divided into a plurality of subgroups, an input terminal of each column driver circuit of each subgroup connected to one of said buffer output terminals, each buffer output terminal corresponding to a respective subgroup. 
     
     
       8. A column selecting arrangement according to claim 5, wherein said memory array is divided into a plurality of blocks having corresponding memory cell columns accessable by said column driver circuits. 
     
     
       9. A semiconductor memory device including a memory cell array having a plurality of rows and columns of memory cells divided into a plurality of blocks, and a column selecting arrangement comprising: a plurality of circuit driver circuits each uniquely corresponding to a set of memory cell columns in each block and including input terminals for accessing said set of memory columns in each block in response to signals received at said input terminals, said plurality of column driver circuits being divided into a plurality of adjacent groups each including an equal number, greater than one, of aid plurality of column driver circuits,   predecoder means responsive to an address input for generating a plurality of predecoded signals at a plurality of predecoder output terminals,   connecting means for mutually exclusively connecting groups of said predecoder output terminals to corresponding groups of said column driver circuits, and   column decoder buffer means including a predetermined number of buffer output terminals corresponding to each said group of column driver circuits for applying a column decoder buffer output signal to input terminals of corresponding column driver circuits in response to said address input.   
     
     
       10. A column selecting circuit for selecting a bit line in a semiconductor memory device comprising a memory cell array divided into a plurality of blocks, each of said blocks of said memory cell array including a plurality of word lines, a plurality of bit lines arranged crossing said word lines, and a plurality of memory cells arranged at respective crossings of said word lines and said bit lines, said column selecting circuit comprising: a plurality of column selecting lines for applying a selecting signal in common to corresponding bit lines of said memory cell array;   predecode means for predecoding an applied column address signal to provide a plurality of predecoded signals;   column decode means for decoding said predecoded signals to select one of said plurality of column selecting lines; and   wiring means for transmitting said predecoded signals to said column decode means;   said column decode means including a plurality of selecting signal providing means provided respectively for said plurality of column selecting lines for providing selecting signals to corresponding column selecting lines, respectively;   said plurality of selecting signal providing means being divided into a first hierarchy of selecting signal providing means and a second hierarchy of selecting signal providing means, said first hierarchy of selecting signal providing means including at least one group having a first number of selecting signal providing means, said second hierarchy of selecting signal providing means including a plurality of groups each having a second number of selecting signal providing means, said first number of selecting signal providing means being greater than said second number of selecting signal providing means;   said predecode means providing independent predecoded signals for each group in the first hierarchy of selecting signal providing means and for each group in the second hierarchy of selecting signal providing means; and   said wiring means having a wiring structure for transmitting predecoded signals to each group of said plurality of selecting signal providing means in the first hierarchy and each group of said plurality of selecting signal providing means in the second hierarchy.   
     
     
       11. The column selecting circuit in a semiconductor memory device according to claim 10, wherein said plurality of groups of said second hierarchy is implemented by subdividing each group of said first hierarchy of selecting signal providing means; and   said wiring means has a part of it divided for each groups in said first hierarchy and the rest of it divided for each group in said second hierarchy of selecting signal providing means.   
     
     
       12. The column selecting circuit in a semiconductor memory device according to claim 11, wherein said predecode means includes predecode means for said first hierarchy of selecting signal providing means for generating independent predecoded signals for each group of said first hierarchy of selecting signal providing means and predecode means for said second hierarchy of selecting signal providing means for generating independent predecoded signals for each group of said second hierarchy of selecting signal providing means. .Iadd.   
     
     
       13.  A semiconductor memory device, comprising: a memory cell array having a plurality of blocks each including a plurality of memory cells;   a plurality of selecting lines for selecting a prescribed number of memory cells in each of said plurality of blocks;   predecode means for predecoding an applied address signal and for outputting a plurality of predecoded signals;   decode means for decoding said predecoded signals and for selectively driving a prescribed one of said plurality of selecting lines; and   predecoded signal wirings for transmitting said predecoded signals to said decode means; wherein   said decode means includes a plurality of selecting line driving means provided for said plurality of selecting lines respectively, each for driving the corresponding selecting line, said plurality of selecting line driving means being divided into a plurality of groups,   said predecode means outputs said predecoded signals independent from group to group of said plurality of selecting line driving means, and   said predecoded signal wirings have a structure divided corresponding to group by group of said plurality of selecting line driving means..Iaddend..Iadd.   
     
     
       14.  The semiconductor memory device according to claim 13, wherein said predecode means includes a plural stages of predecoders for hierarchically predecoding said address signal..Iaddend..Iadd.15. A semiconductor device, comprising:   a memory cell array having a plurality of memory cells;   a plurality of selecting lines for selecting a prescribed number of memory cells in the memory cell array;   a band of predecoded signal wirings having a plurality of wiring groups arranged along a first direction, in each of which group a plurality of predecoded signal wirings parallel to the first direction are arranged along a second direction orthogonal to the first direction; and   a plurality of selecting line driving means provided for said plurality of selecting lines respectively and arranged along said first direction, said plurality of selecting line driving means being divided into a plurality of groups corresponding to said plurality of wiring groups of said predecoded signal wiring band, the plurality of selecting line driving means of each group of the selecting line driving means being connected to prescribed ones of the plurality of predecoded signal wirings in the corresponding wiring group, for driving a corresponding selecting line based on the predecoded signals transmitted through the connected   
     
     
        predecoded signal wirings..Iaddend..Iadd.16.  A semiconductor memory device, comprising: a memory cell array having a plurality of memory cells;   a plurality of selecting lines for selecting a prescribed number of memory cells in the memory cell array;   a first band of predecoded signal wirings having a plurality of first wiring groups arranged along a first direction, in each of which group a plurality of first predecoded signal wirings parallel to the first direction are arranged along a second direction orthogonal to the first direction;   a second band of predecoded signal wirings having a second group of wirings or a plurality of second groups of wirings arranged along the second direction, in each of which group a plurality of second predecoded signal wirings parallel to the first direction are arranged along the first direction; and   a plurality of selecting line driving means provided for said plurality of selecting lines respectively and arranged along said first direction, said plurality of selecting line driving means being divided into a plurality of groups corresponding to said plurality of first wiring groups of said first band of predecoded signal wirings, the plurality of selecting line driving means of each group of the selecting line driving means being connected to prescribed first ones of the plurality of first predecoded signal wirings in the corresponding first group of wirings and to corresponding second predecoded signal wirings of the second band of predecoded signal wirings, for driving a corresponding selecting line based on the predecoded signals transmitted through the connected first   
     
     
        and second predecoded signal wirings..Iaddend..Iadd.17.  The semiconductor memory device according to claim 16, wherein different said selecting line driving means are connected to different first predecoded signal wirings or to different combination of the first predecoded signal wirings and connected to a common second predecoded signal wiring in respective ones of said groups of selecting line driving means..Iaddend.