P

Inventor

HIDAKA HIDETO

JP303 patents
⚠️ This page may combine multiple inventors who share the name “HIDAKA HIDETO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

37 patents
US6635934B2Oct 21, 2003

Semiconductor integrated circuit device operating with low power consumption

MITSUBISHI ELECTRIC CORP115 citations99
US6608776B2Aug 19, 2003

Thin film magnetic memory device having a highly integrated memory array

MITSUBISHI ELECTRIC CORP107 citations99
US6426908B1Jul 30, 2002

Semiconductor memory device with reduced current consumption in data hold mode

MITSUBISHI ELECTRIC CORP152 citations99
US6384445B1May 7, 2002

Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions

MITSUBISHI ELECTRIC CORP179 citations99
US6349054B1Feb 19, 2002

Thin film magnetic memory device including memory cells having a magnetic tunnel junction

MITSUBISHI ELECTRIC CORP180 citations99
US6172918B1Jan 9, 2001

Semiconductor memory device allowing high-speed operation of internal data buses

MITSUBISHI ELECTRIC CORP478 citations99
US6018172AJan 25, 2000

Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions

MITSUBISHI ELECTRIC CORP234 citations99
US5179687AJan 12, 1993

Semiconductor memory device containing a cache and an operation method thereof

MITSUBISHI ELECTRIC CORP165 citations99
US6597617B2Jul 22, 2003

Semiconductor device with reduced current consumption in standby state

MITSUBISHI ELECTRIC CORP83 citations98
US6421286B1Jul 16, 2002

Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated therein

MITSUBISHI ELECTRIC CORP116 citations98
US5970507AOct 19, 1999

Semiconductor memory device having a refresh-cycle program circuit

MITSUBISHI ELECTRIC CORP102 citations98
US5933377AAug 3, 1999

Semiconductor memory device and defect repair method for semiconductor memory device

MITSUBISHI ELECTRIC CORP91 citations98
US5509132AApr 16, 1996

Semiconductor memory device having an SRAM as a cache memory integrated on the same chip and operating method thereof

MITSUBISHI ELECTRIC CORP124 citations98
US5222047AJun 22, 1993

Method and apparatus for driving word line in block access memory

MITSUBISHI ELECTRIC CORP121 citations98
US6646911B2Nov 11, 2003

Thin film magnetic memory device having data read current tuning function

MITSUBISHI ELECTRIC CORP71 citations96
US6587371B1Jul 1, 2003

Memory device having wide margin of data reading operation, for storing data by change in electric resistance value

MITSUBISHI ELECTRIC CORP71 citations96
US6501679B2Dec 31, 2002

Thin film magnetic device including memory cells having a magnetic tunnel junction

MITSUBISHI ELECTRIC CORP35 citations96
US6487136B2Nov 26, 2002

Semiconductor memory device with reduced current consumption in data hold mode

MITSUBISHI ELECTRIC CORP48 citations96
US6414894B2Jul 2, 2002

Semiconductor device with reduced current consumption in standby state

MITSUBISHI ELECTRIC CORP66 citations96
US6400632B1Jun 4, 2002

Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall

MITSUBISHI ELECTRIC CORP56 citations96
US6400621B2Jun 4, 2002

Semiconductor memory device and method of checking same for defect

MITSUBISHI ELECTRIC CORP78 citations96
US6384674B2May 7, 2002

Semiconductor device having hierarchical power supply line structure improved in operating speed

MITSUBISHI ELECTRIC CORP73 citations96
US6366515B2Apr 2, 2002

Semiconductor memory device

MITSUBISHI ELECTRIC CORP69 citations96
US6359805B1Mar 19, 2002

Thin film magnetic memory device capable of easily controlling a data write current

MITSUBISHI ELECTRIC CORP70 citations96
US6313695B1Nov 6, 2001

Semiconductor circuit device having hierarchical power supply structure

MITSUBISHI ELECTRIC CORP49 citations96
US6144577ANov 7, 2000

Semiconductor memory device having multibit data bus and redundant circuit configuration with reduced chip area

MITSUBISHI ELECTRIC CORP56 citations96
US6115283ASep 5, 2000

Semiconductor device with programming capacitance element

MITSUBISHI ELECTRIC CORP55 citations96
US5973983AOct 26, 1999

Semiconductor memory device having a hierarchical bit line structure with reduced interference noise

MITSUBISHI ELECTRIC CORP81 citations96
US5953261ASep 14, 1999

Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output

MITSUBISHI ELECTRIC CORP55 citations96
US5936443AAug 10, 1999

Power-on reset signal generator for semiconductor device

MITSUBISHI ELECTRIC CORP73 citations96
USRE36089EFeb 9, 1999

Column selecting circuit in semiconductor memory device

MITSUBISHI ELECTRIC CORP52 citations96
US5867440AFeb 2, 1999

Semiconductor storage device with improved layout of power supply lines

MITSUBISHI ELECTRIC CORP41 citations96
US5825696AOct 20, 1998

Semiconductor memory device including an SOI substrate

MITSUBISHI ELECTRIC CORP33 citations96
US5793686AAug 11, 1998

Semiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/output

MITSUBISHI ELECTRIC CORP49 citations96
US5701090ADec 23, 1997

Data output circuit with reduced output noise

MITSUBISHI ELECTRIC CORP25 citations96
US5687123ANov 11, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP66 citations96
US5668755ASep 16, 1997

Semiconductor memory device having well region

MITSUBISHI ELECTRIC CORP65 citations96

RENESAS TECH CORP

11 patents

RENESAS ELECTRONICS CORP

1 patent

MITSUBISHI ELECTRIC ENG

1 patent

Showing the top 50 of 303 patents by PatentIndex Score.