P

Inventor

HAYASHIKOSHI MASANORI

JP34 patents
⚠️ This page may combine multiple inventors who share the name “HAYASHIKOSHI MASANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

31 patents
US5297096AMar 22, 1994

Nonvolatile semiconductor memory device and data erasing method thereof

MITSUBISHI ELECTRIC CORP135 citations98
US6097180AAug 1, 2000

Voltage supply circuit and semiconductor device including such circuit

MITSUBISHI ELECTRIC CORP44 citations96
USRE36089EFeb 9, 1999

Column selecting circuit in semiconductor memory device

MITSUBISHI ELECTRIC CORP52 citations96
US5600281AFeb 4, 1997

Oscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the same

MITSUBISHI ELECTRIC CORP61 citations96
US5499214AMar 12, 1996

Oscillator circuit generating a clock signal having a temperature dependent cycle and a semiconductor memory device including the same

MITSUBISHI ELECTRIC CORP81 citations96
US5347490ASep 13, 1994

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP77 citations96
US5321646AJun 14, 1994

Layout of a semiconductor memory device

MITSUBISHI ELECTRIC CORP68 citations96
US5283758AFeb 1, 1994

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP67 citations96
US5249155ASep 28, 1993

Semiconductor device incorporating internal voltage down converting circuit

MITSUBISHI ELECTRIC CORP81 citations96
US5233610AAug 3, 1993

Semiconductor memory device having error correcting function

MITSUBISHI ELECTRIC CORP109 citations96
US5132928AJul 21, 1992

Divided word line type non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP78 citations96
US4970727ANov 13, 1990

Semiconductor integrated circuit having multiple self-test functions and operating method therefor

MITSUBISHI ELECTRIC CORP95 citations96
US6011428AJan 4, 2000

Voltage supply circuit and semiconductor device including such circuit

MITSUBISHI ELECTRIC CORP43 citations93
US5691661ANov 25, 1997

Pulse generating circuit and a semiconductor memory device provided with the same

MITSUBISHI ELECTRIC CORP27 citations93
US5617362AApr 1, 1997

Semiconductor memory device having extended data out function

MITSUBISHI ELECTRIC CORP25 citations93
US5544117AAug 6, 1996

Non-volatile semiconductor memory device with improved collective erasing operation

MITSUBISHI ELECTRIC CORP40 citations93
US5532961AJul 2, 1996

Semiconductor memory device having extended data out function

MITSUBISHI ELECTRIC CORP23 citations93
US5465063ANov 7, 1995

Pulse generating circuit with temperature compensation

MITSUBISHI ELECTRIC CORP22 citations93
US5315548AMay 24, 1994

Column selecting circuit in semiconductor memory device

MITSUBISHI ELECTRIC CORP20 citations93
US6337814B1Jan 8, 2002

Semiconductor memory device having reference potential generating circuit

MITSUBISHI ELECTRIC CORP25 citations92
US5956281ASep 21, 1999

Semiconductor memory device capable of setting substrate voltage shallow in disturb test mode and self refresh mode

MITSUBISHI ELECTRIC CORP22 citations92
US6088819AJul 11, 2000

Dynamic semiconductor memory device and method of testing the same

MITSUBISHI ELECTRIC CORP25 citations90
US5835419ANov 10, 1998

Semiconductor memory device with clamping circuit for preventing malfunction

MITSUBISHI ELECTRIC CORP17 citations82
US6304503B1Oct 16, 2001

Semiconductor memory device

MITSUBISHI ELECTRIC CORP13 citations74
US5554868ASep 10, 1996

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP10 citations74
US5986915ANov 16, 1999

Semiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select line

MITSUBISHI ELECTRIC CORP7 citations73
US5825694AOct 20, 1998

Semiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select line

MITSUBISHI ELECTRIC CORP6 citations73
US5666317ASep 9, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP14 citations73
US5574691ANov 12, 1996

Semiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh test

MITSUBISHI ELECTRIC CORP14 citations73
US5519659AMay 21, 1996

Semiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh test

MITSUBISHI ELECTRIC CORP13 citations73
US6483761B2Nov 19, 2002

Semiconductor memory device

MITSUBISHI ELECTRIC CORP4 citations63

RENESAS ELECTRONICS CORP

2 patents

TANIZAKI HIROAKI

1 patent